High Voltage Diode 500kv
US$0.79 / Piece
View
  • Recommend for you
  • What is Thyristor/Diode Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=110A fetures applications MT110CB18T1
  • What is PNP Transistor Moitsure Sensitivity Level 1 High current SOT-223 Fetures Applications PZT2907AQ
  • What is Glass Passivated Three Phase Rectifier Bridge VRRM=800 to 1800V ID=75A UL recognized applied for file no. E360040 fetures applications MD75S-M2

What is N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD20N06AQ

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1000 Pieces US$0.79 / Piece

Sepcifications

  • Certification RoHS
  • Function Switch Transistor
  • Encapsulation Structure PDFN5060-8L
  • Material Silicon
  • Transport Package Plastic Package
  • Specification Customized
  • Trademark YJ
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application2 Power Factor Correction (Pfc)
  • Application3 Uninterruptible Power Supply (UPS)
  • Application4 AC to DC Converters
  • Application5 Telecom
  • Application6 TV Power & LED Lighting Power

Product Description

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD20N06AQ Product Summary - VDS 60V - ID 20A - RDS(ON)( at VGS=10V) <30mΩ - RDS(ON)( at ...

Learn More

High Voltage Diode 500kv Comparison
Transaction Info
Price US $ 0.79/ Piece US $ 0.10-0.20/ Piece US $ 0.48-0.55/ Piece US $ 0.10-3.99/ Piece US $ 2.598-5.25/ Piece
Min Order 1000 Pieces 100 Pieces 50 Pieces 100 Pieces 100 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification RoHS RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS RoHS, CE
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue - - - - -
Business Model OEM, ODM - - - -
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Function: Switch Transistor;
Encapsulation Structure: PDFN5060-8L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Working Frequency: Overclocking;
Structure: Flat;
Encapsulation Structure: Ceramic Packaged Transistor;
Power Level: High Power;
Material: Germanium;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Samacsys Description: Mosfet N-Channel 55V 29A To220ab;
Fet Feature: Power Field-Effect Transistor;
Category: Transistors - Fets, Mosfets;
Package: Tube;
Product Number: Irfz34npbf;
Condition: Brand Newand Original;
Working Frequency: Overclocking;
Structure: Flat;
Encapsulation Structure: Ceramic Packaged Transistor;
Power Level: High Power;
Material: Germanium;
Product Number: 2sk3868;
Detailed Description: N-Channel 500 V 5A (Ta) 35W (Tc) Through Hole;
Technology: Mosfet (Metal Oxide);
Power Dissipation (Max): 35W (Tc);
Function: Instrument;
Encapsulation Structure: to-220;
Power Level: Enhancement;
Material: Silicon;
Package: /;
Moisture Level: Na;
Number of Channels: 1channel;
Transistor Polarity: N-Channel;
Series: /;
Installation Style: Throughhole;
Function: Mosfet;
Product Type: Mosfet;
Transistor Polarity: N-Channel;
Series: Coolmos C3;
Subcategory: Fet General Purpose Power;
Power Dissipation-Max (ABS): 208 W;
Fet Technology: Metal-Oxide Semiconductor;
Ds Breakdown Voltage-Min: 600 V;
Product Number: Spw20n60c3;
Description: Spw20n60 - 600V Coolmos N-Channe;
Category: Transistor Mosfet;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier