High Voltage Diode 500kv

US$0.16-1.00 / Piece

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N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M pictures & photos

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What is N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M

Name: N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M
Uploaded: 2023-06-22T12:49:54+08:00
Description: N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M FEATURES : • Way-on Small Single MOSFETs • VDS= 20V, ID = 3.1A RDS(on) < 45m&Omeg

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.00

10-99 Pieces US$0.77

100+ Pieces US$0.16

Sepcifications

Certification RoHS, CE, ISO, CCC
Structure Planar
Encapsulation Structure SOT-23
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark Wayon
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M FEATURES : • Way-on Small Single MOSFETs • VDS= 20V, ID = 3.1A RDS(on) < 45mΩ @ VGS = 4.5V RDS(on) < 60mΩ @ VGS = 2.5V • Trench LV MOSFET Technology ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Quick View N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M Contact Now	Quick View Original Transistors Bsc0702L Mosfet N-CH 60V 100A Superso8 Bsc0702 Bsc0702lsatma1 Electronic Component Contact Now	Quick View Original Transistors Ipd320n20n3g Mosfet N-CH 200V 34A To252-3 Ipd320n20 Ipd320n20n3gatma1 Electronic Component Contact Now	Irlml6401 P-Channel 12 V 4.3A (Ta) 1.3W (Ta) SMD Mosfet Transistor Micro3/Sot-23 Irlml6401trpbf Irlml6401 Irlml6402 Contact Now	Nvtfs5116plt Mosfet Transistor 60 V 6A (Ta) 3.2W (Ta) , 21W (Tc) Nvtfs5116 Contact Now

Transaction Info
	Quick View N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M Contact Now	Quick View Original Transistors Bsc0702L Mosfet N-CH 60V 100A Superso8 Bsc0702 Bsc0702lsatma1 Electronic Component Contact Now	Quick View Original Transistors Ipd320n20n3g Mosfet N-CH 200V 34A To252-3 Ipd320n20 Ipd320n20n3gatma1 Electronic Component Contact Now	Irlml6401 P-Channel 12 V 4.3A (Ta) 1.3W (Ta) SMD Mosfet Transistor Micro3/Sot-23 Irlml6401trpbf Irlml6401 Irlml6402 Contact Now	Nvtfs5116plt Mosfet Transistor 60 V 6A (Ta) 3.2W (Ta) , 21W (Tc) Nvtfs5116 Contact Now
Price	US $ 0.16-1.00/ Piece	US $ 0.50-0.70/ Piece	US $ 2.40-2.60/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece
Min Order	1 Pieces	10 Pieces	10 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS, CE, ISO	RoHS, CE, ISO	-	-
Management System Certification	-	ISO 9001	ISO 9001	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	-	-	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Structure: Planar; Encapsulation Structure: SOT-23; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: SMD; Function: Mosfet; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 12 V; Continuous Drain (ID) @ 25°c: 4.3A (Ta); Drive Voltage (Max RDS on, Min RDS on): 1.8V, 4.5V; RDS on (Max) @ ID, Vgs: 50mohm @ 4.3A, 4.5V; Vgs(Th) (Max) @ ID: 950mv @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 15 Nc @ 5 V; Vgs (Max): ±8V; Input Capacitance (CISS) (Max) @ Vds: 830 PF @ 10 V; Power Dissipation (Max): 1.3W (Ta); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: to-236-3, Sc-59, Sot-23-3; Base Product Number: Irlml6401;	Shape: SMD; Function: Mosfet; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Continuous Drain (ID) @ 25°c: 6A (Ta); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 52mohm @ 7A, 10V; Vgs(Th) (Max) @ ID: 3V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 25 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 1258 PF @ 25 V; Power Dissipation (Max): 3.2W (Ta), 21W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: 8-Wdfn; Base Product Number: Nvtfs5116;
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