Bridge Rectifier
US$0.16-0.17 / Piece
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What is 60V/70A 6mΩ RU6070L N-Channel Advanced Power Mosfet

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

2,500-4,999 Pieces US$0.17

5,000+ Pieces US$0.16

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Shape GT
  • Shielding Type Remote Cut-Off Shielding Tube
  • Cooling Method Naturally Cooled Tube
  • Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Chip Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Plastic Package
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application3 Power Factor Correction (Pfc)
  • Application4 Uninterruptible Power Supply (UPS)
  • Application5 AC to DC Converters
  • Application6 Telecom, Solar

Product Description

N-Channel Advanced Power Mosfet 60V/70A 6mΩ RU6070L Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device sales and technical services. The core management team has many years of industry background, and ...

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Bridge Rectifier Comparison
Transaction Info
Price US $ 0.16-0.17/ Piece US $ 0.10-0.13/ Piece US $ 0.115-0.13/ Piece US $ 0.11-0.13/ Piece US $ 1.23/ Piece
Min Order 2500 Pieces 1000 Pieces 1000 Pieces 10 Pieces 10 Pieces
Trade Terms - FOB FOB, CIF, EXW FOB, CIF, EXW FOB, CIF, EXW
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, Western Union, Paypal
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS RoHS RoHS -
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue - - - - -
Business Model OEM, ODM - - - -
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Shape: GT;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application3: Power Factor Correction (Pfc);
Application4: Uninterruptible Power Supply (UPS);
Application5: AC to DC Converters;
Application6: Telecom, Solar;
Shape: ST;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Transistor Type Product Parament: 8 NPN Darlington;
Detailed Description: Transistor Array 8 NPN Darlington 50V 500mA 2.25W;
Product Number: Uln2804A;
Collector- Emitter Voltage Vceo Max: 50 V;
Transistor Polarity: NPN;
Product Category: Darlington Transistor;
Description: Darlington Transistors Eight NPN Array;
Shape: ST;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: Medium Power Tube;
Structure: NPN;
Encapsulation Structure: Chip Transistor;
Material: Silicon;
Transistor Type: NPN;
Product Type: Switching Diode;
Package: Plug-in Transistor;
Installation Type: Through Hole;
Family: Transistor (Bjt) - Single;
Collector-Emitter Voltage-Max: 60 V;
Transistor Application: Amplifier;
Product Number: 2SD2012;
Category: Transistor;
Package Style: Flange Mount;
Current - Collector (IC) (Max): 3A;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Mosfet;
Working Frequency: High Frequency;
Structure: Diffusion;
Encapsulation Structure: Chip Transistor;
Power Level: Medium Power;
Material: Iron and Plastic;
Brand Name: Jdp;
Ds Breakdown Voltage-Min: /;
Fet Technology: Metal-Oxide Semiconductor;
Product Number: Transistor;
Product Type: Mosfet;
Transistor Type: N-Channel;
Detailed Description: /;
Technology: Mosfet;
Installation Type: Through Hole;
Transistor Polarity: N-Channel;
Fet Type: N-Channel;
Installation Style: Throughhole;
Price: Pls Contact Our;
Subcategory: Fet General Purpose Power;
Type: Mosfet;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier