Super Junction
US$0.521 / Piece
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What is 600V 0.16ohm Super Junction Power MOSFET WMJ26N60C4

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1000 Pieces US$0.521 / Piece

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Shape WMJ26N60C4
  • Shielding Type WMJ26N60C4
  • Cooling Method WMJ26N60C4
  • Function WMJ26N60C4
  • Working Frequency WMJ26N60C4
  • Structure WMJ26N60C4
  • Encapsulation Structure WMJ26N60C4
  • Power Level WMJ26N60C4
  • Material metal
  • Transport Package Carton
  • Specification metal
  • Trademark Merryelc
  • Origin Guangdong, China
  • Feature1 VDS=650V Tj,max
  • Feature2 Typ. RDS(on)= 0.16ohms
  • Feature3 100% UIS tested
  • Feature4 Pb-free plating, Halogen free
  • Applications LED Lighting, Charger, Adapter, PC, LCD TV, Serve

Product Description

Product Description 600V 0.16ohms Super Junction Power MOSFET WMJ26N60C4 Description WMOSTM C4 is Wayon's 4th generation super junction MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. WMOSTM C4 is suitable for ...

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Super Junction Comparison
Transaction Info
Price US $ 0.521/ Piece Negotiable US $ 0.10-1.10/ Piece US $ 0.10-0.60/ Piece Negotiable
Min Order 1000 Pieces 5000 Pieces 600 Pieces 1000 Pieces 2500 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T L/C, T/T L/C, T/T L/C, T/T
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, ISO RoHS, ISO RoHS, ISO RoHS, ISO
Management System Certification - ISO 9001, ISO 14001 ISO 9001, ISO 14001 ISO 9001, ISO 14001 ISO 9001, ISO 14001
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM, ODM Own Brand Own Brand Own Brand Own Brand
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Product Attributes
Specification
Shape: WMJ26N60C4;
Shielding Type: WMJ26N60C4;
Cooling Method: WMJ26N60C4;
Function: WMJ26N60C4;
Working Frequency: WMJ26N60C4;
Structure: WMJ26N60C4;
Encapsulation Structure: WMJ26N60C4;
Power Level: WMJ26N60C4;
Material: metal;
Feature1: VDS=650V Tj,max;
Feature2: Typ. RDS(on)= 0.16ohms;
Feature3: 100% UIS tested;
Feature4: Pb-free plating, Halogen free;
Applications: LED Lighting, Charger, Adapter, PC, LCD TV, Serve;
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier