High Voltage Diode 500kv
US$0.712 / Piece
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What is NPN Digital Transistors (Built-in Resistors) fetures applications Moisture Sensitivity Level 1 SOT-323 DTC144EUAQ

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1000 Pieces US$0.712 / Piece

Sepcifications

  • Certification RoHS
  • Function Switch Transistor
  • Structure Alloy
  • Encapsulation Structure SOT-323
  • Material Silicon
  • Transport Package Plastic Package
  • Specification Customized
  • Trademark MR
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application2 Power Factor Correction (Pfc)
  • Application3 Uninterruptible Power Supply (UPS)
  • Application4 AC to DC Converters
  • Application5 Telecom
  • Application6 TV Power & LED Lighting Power

Product Description

NPN Digital Transistors (Built-in Resistors) fetures applications Moisture Sensitivity Level 1 SOT-323 DTC144EUAQ Features - Epoxy meets UL-94 V-0 flammability rating - Moisture Sensitivity Level 1 - Built-in bias resistors enable the configuration of an inverter circuit without connecting ...

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High Voltage Diode 500kv Comparison
Transaction Info
Price US $ 0.712/ Piece US $ 0.01-1.00/ Piece US $ 0.024-0.039/ Piece US $ 0.01-1.00/ Piece US $ 0.185-0.215/ Piece
Min Order 1000 Pieces 1 Pieces 20 Pieces 1 Pieces 20 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Paypal T/T, Western Union, Paypal T/T, Paypal
Quality Control
Product Certification RoHS - RoHS, ISO - RoHS, ISO, SGS
Management System Certification - GMP ISO 9001 GMP ISO 9001
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM, ODM OEM Own Brand OEM Own Brand
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- Off-season: 1 Month(s) - Off-season: 1 Month(s)
Product Attributes
Specification
Function: Switch Transistor;
Structure: Alloy;
Encapsulation Structure: SOT-323;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Shape: DIP;
Shielding Type: Standard;
Cooling Method: Standard;
Function: N/a;
Working Frequency: Standard;
Structure: Standard;
Encapsulation Structure: DIP;
Power Level: Standard;
Material: Standard;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 40 V;
Continuous Drain (ID) @ 25°c: 87A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 9.2mohm @ 52A, 10V;
Vgs(Th) (Max) @ ID: 4V @ 100ua;
Gate Charge (Qg) (Max) @ Vgs: 54 Nc @ 10 V;
Vgs (Max): +-20V;
Input Capacitance (CISS) (Max) @ Vds: 2150 PF @ 25 V;
Power Dissipation (Max): 143W (Tc);
Operating Temperature: -55c ~ 175c (Tj);
Mounting Type: Through Hole;
Supplier Device Package: to-220ab;
Package / Case: to-220-3;
Function: Switch Transistor;
Structure: Trench;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Plastic;
Spq: 3000 PCS/ Reel;
Lead Time: 4~6 Weeks;
Shape: DIP;
Shielding Type: Standard;
Cooling Method: Standard;
Function: N/a;
Working Frequency: Standard;
Structure: Standard;
Encapsulation Structure: DIP;
Power Level: Standard;
Material: Standard;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 150 V;
Continuous Drain (ID) @ 25°c: 43A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 42mohm @ 22A, 10V;
Vgs(Th) (Max) @ ID: 4V @ 250ua;
Gate Charge (Qg) (Max) @ Vgs: 200 Nc @ 10 V;
Vgs (Max): +-20V;
Input Capacitance (CISS) (Max) @ Vds: 2400 PF @ 25 V;
Power Dissipation (Max): 200W (Tc);
Operating Temperature: -55c ~ 175c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: to-220ab;
Package / Case: to-220-3;
Function: Switch Transistor;
Structure: Trench;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Spq: 2500PCS/Reel;
Lead Time: 4~6 Weeks;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier