Bridge Rectifier

US$0.08-1.00 / Piece

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100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1 pictures & photos

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What is 100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1

Name: 100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1
Uploaded: 2023-09-18T13:47:24+08:00
Description: 100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1 WMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-s

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.00

10-99 Pieces US$0.71

100+ Pieces US$0.08

Sepcifications

Certification RoHS, CE, ISO, CCC
Function Switch Transistor
Working Frequency Low Frequency
Structure Planar
Encapsulation Structure TO-252
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark Wayon
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1 WMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features : • VDS= ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Bridge Rectifier Comparison

	Quick View 100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1 Contact Now	Quick View Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet Contact Now	Quick View Mosfet P-Channel 20V 3.1A Sot23-3 SMD Si2301CDS-T1-Ge3 Contact Now	Quick View Array 1pair Series Connection SMD Bav99, 215 Diode Bav99 Series Contact Now	Quick View Irf100b202 Equivalent Transistor 100V 75A to-220 Package Mosfet Contact Now

Transaction Info
	Quick View 100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1 Contact Now	Quick View Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet Contact Now	Quick View Mosfet P-Channel 20V 3.1A Sot23-3 SMD Si2301CDS-T1-Ge3 Contact Now	Quick View Array 1pair Series Connection SMD Bav99, 215 Diode Bav99 Series Contact Now	Quick View Irf100b202 Equivalent Transistor 100V 75A to-220 Package Mosfet Contact Now
Price	US $ 0.08-1.00/ Piece	US $ 0.199-0.259/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	Negotiable
Min Order	1 Pieces	20 Pieces	1 Pieces	1 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS, ISO, SGS	-	-	RoHS, ISO, SGS
Management System Certification	-	ISO 9001	GMP	GMP	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	OEM	OEM	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	-	-	Off-season: 1 Month(s)
Product Attributes
Specification	Function: Switch Transistor; Working Frequency: Low Frequency; Structure: Planar; Encapsulation Structure: TO-252; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 2500PCS/Reel; Lead Time: 4~6 Weeks;	Shape: DIP; Encapsulation Structure: SMD; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 20 V; Continuous Drain (ID) @ 25°c: 3.1A (Tc); Drive Voltage (Max RDS on, Min RDS on): 2.5V, 4.5V; RDS on (Max) @ ID, Vgs: 112mohm @ 2.8A, 4.5V; Vgs(Th) (Max) @ ID: 1V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 10 Nc @ 4.5 V; Vgs (Max): ±8V; Input Capacitance (CISS) (Max) @ Vds: 405 PF @ 10 V; Power Dissipation (Max): 860MW (Ta), 1.6W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: Sot-23-3 (to-236); Package / Case: to-236-3, Sc-59, Sot-23-3;	Shape: SMD; Type: Standard; Voltage - DC Reverse (Vr) (Max): 100 V; Current - Average Rectified (Io) (Per Di: 215mA (DC); Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 Ma; Speed: Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (Trr): 4 Ns; Current - Reverse Leakage @ Vr: 500 Na @ 80 V; Operating Temperature - Junction: 150°c (Max); Mounting Type: Surface Mount; Supplier Device Package: to-236-3, Sc-59, Sot-23-3; Package / Case: to-236ab; Base Product Number: Bav99;	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 2500PCS/Reel; Lead Time: 4~6 Weeks;
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