Bridge Rectifier
US$0.20-0.21 / Piece
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What is 60V/80A 7mΩ RU6080L N-Channel Advanced Power Mosfet

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

1,000-2,999 Pieces US$0.21

3,000+ Pieces US$0.20

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Shape GT
  • Shielding Type Remote Cut-Off Shielding Tube
  • Cooling Method Naturally Cooled Tube
  • Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Chip Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Plastic Package
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application3 Power Factor Correction (Pfc)
  • Application4 Uninterruptible Power Supply (UPS)
  • Application5 AC to DC Converters
  • Application6 Telecom, Solar

Product Description

N-Channel Advanced Power Mosfet 60V/80A 7mΩ RU6080L Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device sales and technical services. The core management team has many years of industry background, and ...

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Bridge Rectifier Comparison
Transaction Info
Price US $ 0.20-0.21/ Piece US $ 0.0099-0.0258/ Piece US $ 0.0099-0.0258/ Piece US $ 0.15/ Piece US $ 0.01-1.00/ Piece
Min Order 1000 Pieces 5000 Pieces 5000 Pieces 100 Pieces 1 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE RoHS, CE
Management System Certification - - - GMP GMP
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic Domestic North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM, ODM - - OEM OEM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- - - -
Product Attributes
Specification
Shape: GT;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application3: Power Factor Correction (Pfc);
Application4: Uninterruptible Power Supply (UPS);
Application5: AC to DC Converters;
Application6: Telecom, Solar;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
PC: 150MW;
I Trm: 2A;
Case: Do-35;
Vo: 5V;
I Vo: 100ua;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Ppp (W): 400W;
I PP: 17A;
Case: Sot-23;
V Br: 7.5V;
I R: 20ua;
Shape: DIP;
Shielding Type: Remote Cut-Off Shielding Tube;
Function: Mosfet;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 900 V;
Continuous Drain (ID) @ 25°c: 5A (Ta);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 2.5ohm @ 3A, 10V;
Vgs(Th) (Max) @ ID: 4V @ 1mA;
Gate Charge (Qg) (Max) @ Vgs: 28 Nc @ 10 V;
Vgs (Max): ±30V;
Input Capacitance (CISS) (Max) @ Vds: 1150 PF @ 25 V;
Power Dissipation (Max): 45W (Tc);
Operating Temperature: 150°c (Tj);
Mounting Type: Through Hole;
Supplier Device Package: to-220-3 Full Pack;
Base Product Number: 2sk3565;
Function: NPN;
Fet Typecurrent - Collector (IC) (Max): 600 Ma;
Voltage - Collector Emitter Breakdown (M: 160 V;
Vce Saturation (Max) @ Ib, IC: 200mv @ 5mA, 50mA;
Current - Collector Cutoff (Max): 100na;
DC Current Gain (Hfe) (Min) @ IC, Vce: 80 @ 10mA, 5V;
Power - Max: 225 MW;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: to-236-3, Sc-59, Sot-23-3;
Base Product Number: Mmbt5551;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

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Guangdong Juxing Electronics Technology Co., Ltd

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ShenZhen Nova Semiconductor Co., Ltd.

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ShenZhen Nova Semiconductor Co., Ltd.

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