Specification |
Shape: GT;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application3: Power Factor Correction (Pfc);
Application4: Uninterruptible Power Supply (UPS);
Application5: AC to DC Converters;
Application6: Telecom, Solar;
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Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
PC: 150MW;
I Trm: 2A;
Case: Do-35;
Vo: 5V;
I Vo: 100ua;
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Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Ppp (W): 400W;
I PP: 17A;
Case: Sot-23;
V Br: 7.5V;
I R: 20ua;
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Shape: DIP;
Shielding Type: Remote Cut-Off Shielding Tube;
Function: Mosfet;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 900 V;
Continuous Drain (ID) @ 25°c: 5A (Ta);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 2.5ohm @ 3A, 10V;
Vgs(Th) (Max) @ ID: 4V @ 1mA;
Gate Charge (Qg) (Max) @ Vgs: 28 Nc @ 10 V;
Vgs (Max): ±30V;
Input Capacitance (CISS) (Max) @ Vds: 1150 PF @ 25 V;
Power Dissipation (Max): 45W (Tc);
Operating Temperature: 150°c (Tj);
Mounting Type: Through Hole;
Supplier Device Package: to-220-3 Full Pack;
Base Product Number: 2sk3565;
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Function: NPN;
Fet Typecurrent - Collector (IC) (Max): 600 Ma;
Voltage - Collector Emitter Breakdown (M: 160 V;
Vce Saturation (Max) @ Ib, IC: 200mv @ 5mA, 50mA;
Current - Collector Cutoff (Max): 100na;
DC Current Gain (Hfe) (Min) @ IC, Vce: 80 @ 10mA, 5V;
Power - Max: 225 MW;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: to-236-3, Sc-59, Sot-23-3;
Base Product Number: Mmbt5551;
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