High Voltage Diode 500kv

US$0.758 / Piece

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What is Surface Mount Super Fast Recovery Rectifier Low profile package Super Fast reverse recovery time fetures applications DO-214AC (SMA) ES2AAQ

Name: Surface Mount Super Fast Recovery Rectifier Low profile package Super Fast reverse recovery time fetures applications DO-214AC (SMA) ES2AAQ
Uploaded: 2024-11-30T09:26:02+08:00
Description: Surface Mount Super Fast Recovery Rectifier Low profile package Super Fast reverse recovery time fetures applications DO-214AC (SMA) ES2AAQ Features - Low profile package - Ideal for automated placeme

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About this Item

Price

Min. Order Reference FOB Price

1000 Pieces US$0.758 / Piece

Sepcifications

Certification RoHS
Function Switch Transistor
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark YJ
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

Surface Mount Super Fast Recovery Rectifier Low profile package Super Fast reverse recovery time fetures applications DO-214AC (SMA) ES2AAQ Features - Low profile package - Ideal for automated placement - Glass passivated chip junction - Super Fast reverse recovery time - High forward surge ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews: 5.0/5.0

(2 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Surface Mount Super Fast Recovery Rectifier Low profile package Super Fast reverse recovery time fetures applications DO-214AC (SMA) ES2AAQ Contact Now	Quick View SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter Contact Now	Best Quality RF Power Triode 3cw30000h3 Electron Tube (3CW20000A7) Contact Now	Quick View Zg 5n60 Mosfet 600V 2.8A To220f 5n60 Contact Now	Quick View New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65 Contact Now

Transaction Info
	Surface Mount Super Fast Recovery Rectifier Low profile package Super Fast reverse recovery time fetures applications DO-214AC (SMA) ES2AAQ Contact Now	Quick View SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter Contact Now	Best Quality RF Power Triode 3cw30000h3 Electron Tube (3CW20000A7) Contact Now	Quick View Zg 5n60 Mosfet 600V 2.8A To220f 5n60 Contact Now	Quick View New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65 Contact Now
Price	US $ 0.758/ Piece	Negotiable	US $ 2,800.00-3,500.00/ Piece	US $ 0.039/ Piece	US $ 0.041/ Piece
Min Order	1000 Pieces	100 Pieces	1 Pieces	1000 Pieces	1000 Pieces
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	L/C, T/T, Western Union, Money Gram	T/T	T/T
Quality Control
Product Certification	RoHS	RoHS, IATF16949	ISO	RoHS, CE, ISO, CCC, SGS	RoHS, CE, ISO, CCC, SGS
Management System Certification	-	ISO 9001, ISO 14001, IATF16949	-	ISO 9001, HSE, GMP, QHSE, EICC, GAP, BREEAM, QSR, ISO 50001	ISO 9001, HSE, GMP, QHSE, EICC, GAP, BREEAM, QSR, ISO 50001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, Eastern Europe, Africa, Western Europe	North America, Eastern Europe, Africa, Western Europe
Annual Export Revenue	US$5 Million - US$10 Million	Above US$100 Million	-	Above US$100 Million	Above US$100 Million
Business Model	OEM, ODM	Own Brand(JF, JH)	-	OEM, ODM, Own Brand(ZG)	OEM, ODM, Own Brand(ZG)
Average Lead Time	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: 1-3 months	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: 1-3 months	Off Season Lead Time: within 15 workdays Peak Season Lead Time: 1-3 months
Product Attributes
Specification	Function: Switch Transistor; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: MODULE; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon Carbide; VDS: 1200V; ID: 65A; RDS(ON): 40 Milliohm;	Shape: Metal Porcelain Tube; Shielding Type: Metal- Ceramic; Cooling Method: Water Cooled Tube; Function: Radio Frequency Heating; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: IGBT; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: IGBT; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	Jinan Jingheng Electronics Co., Ltd.	Beijing Jenerator Electronic Co.,Ltd	Jiangsu Zhongxin Semiconductor Co., Ltd.	Jiangsu Zhongxin Semiconductor Co., Ltd.
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