Stwa65n045m9 Mosfet N-Channel 650V 39mohm 54 a Mdmesh M9 Power Mosfet pictures & photos

Stwa65n045m9 Mosfet N-Channel 650V 39mohm 54 a Mdmesh M9 Power Mosfet

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Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$0.10

1,000-9,999 Pieces US$0.01

10,000+ Pieces US$0.001

Sepcifications

Certification RoHS, CE, ISO, CCC
Shape Metal Porcelain Tube
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Naturally Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Germanium
Transport Package Foam
Specification Standard
Trademark Standard
Origin Original
Supply Type in Stock Item
Product Status Active
Detailed Description Bipolar (Bjt) Transistor

Product Description

Product Description STWA65N045M9 MOSFET N-channel 650V 39mOhm 54 A MDmesh M9 Power MOSFET Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-247-3 Transistor ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Stwa65n045m9 Comparison

	Stwa65n045m9 Mosfet N-Channel 650V 39mohm 54 a Mdmesh M9 Power Mosfet Contact Now	Quick View Totem-Pole Bridgeless Synchronous Rectification Systems Fsmos Mosfet Contact Now	Quick View Interleaved Boost Pfc Isolated DC/DC Convertor Fsmos Mosfet Contact Now	Quick View Pd Charger RoHS Perfect Replacement for The Gallium Nitride (GaN) Device in High-Frequency Operations Super Si Mosfet Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now

Transaction Info
	Stwa65n045m9 Mosfet N-Channel 650V 39mohm 54 a Mdmesh M9 Power Mosfet Contact Now	Quick View Totem-Pole Bridgeless Synchronous Rectification Systems Fsmos Mosfet Contact Now	Quick View Interleaved Boost Pfc Isolated DC/DC Convertor Fsmos Mosfet Contact Now	Quick View Pd Charger RoHS Perfect Replacement for The Gallium Nitride (GaN) Device in High-Frequency Operations Super Si Mosfet Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now
Price	US $ 0.001-0.10/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece	US $ 0.10-0.60/ Piece
Min Order	10 Pieces	660 Pieces	660 Pieces	660 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal, Money Gram	T/T	T/T	T/T	L/C, T/T
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	GMP	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	-	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: Metal Porcelain Tube; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Germanium; Supply Type: in Stock Item; Product Status: Active; Detailed Description: Bipolar (Bjt) Transistor;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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