N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Video

Name: N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors
Uploaded: 2023-07-06T18:34:34+08:00
Description: N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB IRL510PBF MOSFET Transistors IRL510 series TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr

Contact Now

Get Latest Price

About this Item

Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$0.10

10-99 Pieces US$0.01

100+ Pieces US$0.001

Sepcifications

Shape Through Hole
Function Mosfet
Encapsulation Structure Chip Transistor
Material Silicon
Transport Package Standard
Specification Standard
Trademark Original
Origin Original
Fet Type N-Channel
Technology Mosfet (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Continuous Drain (ID) @ 25°c 5.6A (Tc)
Drive Voltage 4V, 5V
RDS on (Max) @ ID, Vgs 540mohm @ 3.4A, 5V
Vgs(Th) (Max) @ ID 2V @ 250µa
Gate Charge (Qg) (Max) @ Vgs 6.1 Nc @ 5 V
Vgs (Max) 10V
Input Capacitance (CISS) (Max) @ Vds 250 PF @ 25 V
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°c ~ 175°c (Tj)
Mounting Type Through Hole
Package / Case to-220-3

Product Description

N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB IRL510PBF MOSFET Transistors IRL510 series TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Vishay Siliconix Series - Package Tube Part Status Active FET Type N-Channel ...

Learn More

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Irl510pbf Comparison

	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Schottky Rectifier Modules VRRM=100V IFAV=400A Dual Diode Contruction; May be Paralleled for High Current Output fetures applications MB400K01F4 Contact Now	Quick View Schottky Rectifier Modules VRRM=100V IFAV=400A Center Tap Module High Frequency Operation fetures applications MB400K01F4N Contact Now	Quick View Schottky Rectifier Modules VRRM=200V IFAV=400A High Frequency Operation Low Forward Voltage fetures applications MB400K02F4 Contact Now	Quick View Thyristor/Diode Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=90A fetures applications MT90CB16T1 Contact Now

Transaction Info
	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Schottky Rectifier Modules VRRM=100V IFAV=400A Dual Diode Contruction; May be Paralleled for High Current Output fetures applications MB400K01F4 Contact Now	Quick View Schottky Rectifier Modules VRRM=100V IFAV=400A Center Tap Module High Frequency Operation fetures applications MB400K01F4N Contact Now	Quick View Schottky Rectifier Modules VRRM=200V IFAV=400A High Frequency Operation Low Forward Voltage fetures applications MB400K02F4 Contact Now	Quick View Thyristor/Diode Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=90A fetures applications MT90CB16T1 Contact Now
Price	US $ 0.001-0.10/ Piece	US $ 2.88/ Piece	US $ 3.18/ Piece	US $ 2.87/ Piece	US $ 4.35/ Piece
Min Order	1 Pieces	1000 Pieces	1000 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	-	RoHS	RoHS	RoHS	RoHS
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: Through Hole; Function: Mosfet; Encapsulation Structure: Chip Transistor; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Continuous Drain (ID) @ 25°c: 5.6A (Tc); Drive Voltage: 4V, 5V; RDS on (Max) @ ID, Vgs: 540mohm @ 3.4A, 5V; Vgs(Th) (Max) @ ID: 2V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 6.1 Nc @ 5 V; Vgs (Max): 10V; Input Capacitance (CISS) (Max) @ Vds: 250 PF @ 25 V; Power Dissipation (Max): 43W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: to-220-3;	Function: Switch Transistor; Encapsulation Structure: F4; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: F4N; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: F4; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: T1; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
Select All

Contact Now

Hot Search