Bcr166e6433htma1 Bcr166e6433htma1 Sot-23 Transistor pictures & photos

Bcr166e6433htma1 Bcr166e6433htma1 Sot-23 Transistor

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Price

Min. Order Reference FOB Price

1 Piece US$0.0001-0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Plastic Sealed Transistor
Installation SMD Triode
Working Frequency High Frequency
Power Level Medium Power
Function Power Triode
Structure PNP
Material Silicon
Transport Package N/a
Specification DIP/SMD
Trademark N/A
Origin Original

Product Description

BCR166E6433HTMA1 BCR166E6433HTMA1 SOT-23 transistor TYPE DESCRIBE IGP06N60T BCR166E6433HTMA1 Package Tape and Reel (TR) Part status in stock Type Transistor Supplier device packaging SOT-23 Q1: What services do you offer? We provide turnkey solutions including R&D, PCB ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Bcr166e6433htma1 Comparison

	Bcr166e6433htma1 Bcr166e6433htma1 Sot-23 Transistor Contact Now	Irf3415s Irf3415spbf Field Effect Transistor Low Voltage and High Current 43A150V to-263 Contact Now	Quick View Electronic Tube 3cx2500f3, 3cx2500h3, 3cx2500A3 Contact Now	Quick View Hf Valve 3cx2500h3, 3cx2500A3, 3cx2500f3 Contact Now	Quick View High Frequency Vacuum Tube 3cx2500A3, 3cx2500f3, 3cx2500h3 Contact Now

Transaction Info
	Bcr166e6433htma1 Bcr166e6433htma1 Sot-23 Transistor Contact Now	Irf3415s Irf3415spbf Field Effect Transistor Low Voltage and High Current 43A150V to-263 Contact Now	Quick View Electronic Tube 3cx2500f3, 3cx2500h3, 3cx2500A3 Contact Now	Quick View Hf Valve 3cx2500h3, 3cx2500A3, 3cx2500f3 Contact Now	Quick View High Frequency Vacuum Tube 3cx2500A3, 3cx2500f3, 3cx2500h3 Contact Now
Price	US $ 0.0001-0.10/ Piece	US $ 0.44-1.58/ Piece	US $ 400.00-500.00/ Piece	US $ 400.00-500.00/ Piece	US $ 400.00-500.00/ Piece
Min Order	1 Pieces	1000 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union	T/T, Western Union	T/T, Western Union
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS	-	-	-
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	> US $100 Million	> US $100 Million	> US $100 Million
Business Model	OEM	-	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Function: Power Triode; Structure: PNP; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Small Power; Function: Photosensitive, Darlington Tube, Power Triode; Structure: NPN; Material: Silicon;	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 7.5V; Filament Current: 51.5A; Amplifcation Factor: 22; Working Position: Vertical; Power: 4000W; Max Height: 228.68mm; Max Diameter: 105.7mm; Max Weight: 3.4kg; Cooling: Forced Air;	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 7.5V; Filament Current: 51.5A; Amplifcation Factor: 22; Working Position: Vertical; Power: 4000W; Max Height: 228.68mm; Max Diameter: 105.7mm; Max Weight: 3.4kg; Cooling: Forced Air;	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 7.5V; Filament Current: 51.5A; Amplifcation Factor: 22; Working Position: Vertical; Power: 4000W; Max Height: 228.68mm; Max Diameter: 105.7mm; Max Weight: 3.4kg; Cooling: Forced Air;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Ningbo Setec Electron Co., Ltd.
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