Ipw90r120c3fksa1 Mosfet N-Channel 900V 36A (Tc) 417W (Tc) Pg-To247-3-1 Video

Name: Ipw90r120c3fksa1 Mosfet N-Channel 900V 36A (Tc) 417W (Tc) Pg-To247-3-1
Uploaded: 2023-07-06T18:38:56+08:00
Description: IPW90R120C3FKSA1 Mosfet N-Channel 900V 36A (Tc) 417W (Tc) PG-TO247-3-1 Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900 V Current - Continuou

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Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$0.10

1,000-9,999 Pieces US$0.01

10,000+ Pieces US$0.001

Sepcifications

Encapsulation Structure To247-3-1
Installation Plug-in Triode
Working Frequency Other
Power Level Other
Function Mosfet
Structure N-Channel
Material Silicon
Transport Package Carton
Origin China

Product Description

IPW90R120C3FKSA1 Mosfet N-Channel 900V 36A (Tc) 417W (Tc) PG-TO247-3-1 Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900 V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Ipw90r120c3fksa1 Comparison

	Quick View Ipw90r120c3fksa1 Mosfet N-Channel 900V 36A (Tc) 417W (Tc) Pg-To247-3-1 Contact Now	Quick View H25r1203 High Power IGBT 25A1200V Induction Cooker Transistor Contact Now	Power MOS Field Effect Transistor Ika15n60t Contact Now	Ikw20n60t K20t60 20A 600V to-247 IGBT Power Transistor Contact Now	Ikw25n120t2 Ikw25t120 K25t1202 25A 1200V Power IGBT Contact Now

Transaction Info
	Quick View Ipw90r120c3fksa1 Mosfet N-Channel 900V 36A (Tc) 417W (Tc) Pg-To247-3-1 Contact Now	Quick View H25r1203 High Power IGBT 25A1200V Induction Cooker Transistor Contact Now	Power MOS Field Effect Transistor Ika15n60t Contact Now	Ikw20n60t K20t60 20A 600V to-247 IGBT Power Transistor Contact Now	Ikw25n120t2 Ikw25t120 K25t1202 25A 1200V Power IGBT Contact Now
Price	US $ 0.001-0.10/ Piece	US $ 7.5/ Piece	US $ 0.80-2.00/ Piece	US $ 0.30-2.00/ Piece	US $ 5.14-6.27/ Piece
Min Order	10 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	-	RoHS	-	-	-
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	-	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: To247-3-1; Installation: Plug-in Triode; Working Frequency: Other; Power Level: Other; Function: Mosfet; Structure: N-Channel; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Photosensitive, Power Triode, IGBT; Structure: Alloy; Material: Silicon; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Configuration Type: Diode; Category: Transistors - IGBT; IGBT Type: NPT; Vce(on) (Max) @ Vge, IC: 1.8V @ 15V, 25A; Input Type: Standard; Test Condition: 600V, 25A, 10ohm, 15V; Voltage - Collector Emitter Breakdown: 1200 V; Power - Max: 365 W;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Material: Plastic and Copper; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Function: Darlington Tube, Power Triode; Structure: Alloy; Material: Silicon; Product Number: Ikw20n60t; Configuration Type: Inline; Detailed Description: IGBT; Category: IGBT Transistor;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Description: IGBT Transistors Low Loss Duopack 1200V 25A; Mfr. #: Ikw25n120t2; Product Category: IGBT Transistors; Product: Transistors; Series: /;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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