Electronic Components 2n7002 Sot-23 IC Chips pictures & photos

Electronic Components 2n7002 Sot-23 IC Chips

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Price

Min. Order Reference FOB Price

1 Piece US$0.0001-0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Plastic Sealed Transistor
Installation SMD Triode
Working Frequency High Frequency
Power Level Medium Power
Structure PNP
Material Silicon
Transport Package N/a
Specification DIP/SMD
Trademark N/A
Origin Original

Product Description

electronic components 2N7002 Sot-23 ic chips Type Transistor shipping 3~7Day delivery address Shenzhen Brand Original Q1: What services do you offer? We provide turnkey solutions including R&D, PCB fabrication, SMT, testing, and other value-added services. Q2: What ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(6 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

2n7002 Comparison

	Electronic Components 2n7002 Sot-23 IC Chips Contact Now	Quick View Cyp1840 Built-in Clock, Calibration Free, Single Phase Energy Meter IC with Integrated Oscillator Contact Now	G12p Vds 100V ID 12A to-252 P-Channel Power RoHS Compliant Mosfet Contact Now	Pb Free RoHS Reach Compliant 100V Power Transistor Mosfet Gt095n10K to-252 Contact Now	Quick View Power Transistor Gt090n06D52 Package Dfn5*6-8L Semiconductor 60V 40A RoHS Compliant Double Mosfet Contact Now

Transaction Info
	Electronic Components 2n7002 Sot-23 IC Chips Contact Now	Quick View Cyp1840 Built-in Clock, Calibration Free, Single Phase Energy Meter IC with Integrated Oscillator Contact Now	G12p Vds 100V ID 12A to-252 P-Channel Power RoHS Compliant Mosfet Contact Now	Pb Free RoHS Reach Compliant 100V Power Transistor Mosfet Gt095n10K to-252 Contact Now	Quick View Power Transistor Gt090n06D52 Package Dfn5*6-8L Semiconductor 60V 40A RoHS Compliant Double Mosfet Contact Now
Price	US $ 0.0001-0.10/ Piece	US $ 0.326-0.569/ Piece	US $ 0.01-0.40/ Piece	Negotiable	US $ 0.001-0.20/ Piece
Min Order	1 Pieces	50 Pieces	20 Pieces	20 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, D/P, Western Union, Paypal, Money Gram	T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	-	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	GMP	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	OEM, ODM, Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Structure: PNP; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: High Power; Function: Power Triode; Current: 10mA~35A;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Through Hole; Power Level: Medium Power; Structure: Trench; Material: Silicon; Vdss: 100V; ID: 12A; Pd: 57W; RDS(on) Typical: 170mohm(Vgs=10V); RDS(on)Max: 200mohm(Vgs=10V); Vth (Max): -1.6V; CISS: 1720PF; Crss: 41PF; Spq: 2500PCS/Reel;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Through Hole; Power Level: Medium Power; Structure: Trench; Material: Silicon; Vdss: 100V; ID: 55A; Pd: 74W; RDS(on) Typical: 10.5mohm(Vgs=10V); RDS(on)Max: 15mohm(Vgs=10V); Vth (Max): 2.5V; CISS: 1667PF; Crss: 9PF; Spq: 2500PCS/Reel;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Through Hole; Power Level: Medium Power; Structure: Trench; Material: Silicon; Vdss: 60V; ID: 40A; Pd: 62W; RDS(on) Typical: 8.5mohm(Vgs=10V); RDS(on)Max: 9mohm(Vgs=10V); Vth (Max): 2.4V; CISS: 1620PF; Crss: 3PF; Spq: 2500PCS/Reel;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	CY Wireless Technology Limited	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.
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