Original Bul1203e Bipolar (BJT) Transistor NPN 550V 5A 100W (We provide Bom service PCB PCBA) pictures & photos

Original Bul1203e Bipolar (BJT) Transistor NPN 550V 5A 100W (We provide Bom service PCB PCBA)

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Price

Min. Order Reference FOB Price

100 Pieces US$0.20 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure DIP
Installation Plug-in Triode
Power Level Medium Power
Material Silicon
Transport Package Standard
Specification Standard
Origin Original
Transistor Polarity NPN
Collector- Emitter Voltage Vceo Max 550 V
Current - Collector (IC) (Max) 5 a
Vce Saturation (Max) @ Ib, IC 1.5V @ 1A, 3A
Current - Collector Cutoff (Max) 100µa
DC Current Gain (Hfe) (Min) @ IC, Vce 9 @ 2A, 5V
Power - Max 100 W

Product Description

Original BUL1203E Bipolar (BJT) Transistor NPN 550V 5A 100W (We provide Bom service PCB PCBA) Provide bom serice/Contact for more than 100,000 components/PCB TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors Package Tube ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(6 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Electronic Component Comparison

	Original Bul1203e Bipolar (BJT) Transistor NPN 550V 5A 100W (We provide Bom service PCB PCBA) Contact Now	11n80c3 High Power Transistor Spw11n80c3 to-247 Original MOS Field Effect Contact Now	Spw17n80c3 800V17A N-Channel Power MOS Tube 227W Transistor To247 Contact Now	Spw24n60c3 24n60c3 in Stock to-247 N-Channel 650V 24.3A 240W Mosfet Transistors Contact Now	F4n60 4A600V Medium and High Voltage MOS 4n60 Mosfet Contact Now

Transaction Info
	Original Bul1203e Bipolar (BJT) Transistor NPN 550V 5A 100W (We provide Bom service PCB PCBA) Contact Now	11n80c3 High Power Transistor Spw11n80c3 to-247 Original MOS Field Effect Contact Now	Spw17n80c3 800V17A N-Channel Power MOS Tube 227W Transistor To247 Contact Now	Spw24n60c3 24n60c3 in Stock to-247 N-Channel 650V 24.3A 240W Mosfet Transistors Contact Now	F4n60 4A600V Medium and High Voltage MOS 4n60 Mosfet Contact Now
Price	US $ 0.2/ Piece	US $ 0.46-1.45/ Piece	US $ 0.66-1.69/ Piece	US $ 1.00-2.00/ Piece	US $ 0.17-0.18/ Piece
Min Order	100 Pieces	10 Pieces	10 Pieces	10 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS	RoHS	RoHS	RoHS	RoHS
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	-	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: DIP; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Transistor Polarity: NPN; Collector- Emitter Voltage Vceo Max: 550 V; Current - Collector (IC) (Max): 5 a; Vce Saturation (Max) @ Ib, IC: 1.5V @ 1A, 3A; Current - Collector Cutoff (Max): 100µa; DC Current Gain (Hfe) (Min) @ IC, Vce: 9 @ 2A, 5V; Power - Max: 100 W;	Encapsulation Structure: to-247/to-3p; Power Level: High Power; Function: Instrument; Product Type: Mosfet; Package / Box: to-247-3; Installation Style: Through Hole; Channel Mode: Enhancement; Transistor Type: 1 N-Channel;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Through Hole; Power Level: High Power; Function: Photosensitive, Darlington Tube, Power Triode; Fet Type: N-Channel; Installation Type: Through Hole; Installation Style: Throughhole; Channel Mode: Enhancement; Transistor Type: 1n-Channel;	Installation: Through Hole; Power Level: Standard; Function: Power Triode; Material: Silicon; Channel Mode: Enhancement; Radename: Coolmos; Packaging: Tube; Series: Coolmos C3; Subcategory: Mosfet; Product Type: Mosfet; Description: Mosfet N-CH 650V 24.3A To247 Coolmos C3;	Encapsulation Structure: Plastic Sealed Transistor; Installation: To220; Working Frequency: High Frequency; Power Level: Standard; Function: Photosensitive, Power Triode; Structure: Diffusion; Material: Iron and Plastic; Application: Used in Various Power Switching Circuit;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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