Irfw644btm
US$0.001-0.10 / Piece
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Popular Mosfet Irfw644btm N-Channel 250V 14A (Tc) 3.13W (Ta) , 139W (Tc) D2pak Video

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$0.10

1,000-9,999 Pieces US$0.01

10,000+ Pieces US$0.001

Sepcifications

  • Encapsulation Structure Surface Mount
  • Installation SMD Triode
  • Working Frequency Other
  • Power Level Other
  • Function Mosfet
  • Structure Surface Mount
  • Material Silicon
  • Transport Package Foam
  • Origin China

Product Description

Popular Mosfet IRFW644BTM N-Channel 250V 14A (Tc) 3.13W (Ta), 139W (Tc) D2PAK Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250 V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On ...

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Irfw644btm Comparison
Transaction Info
Price US $ 0.001-0.10/ Piece US $ 0.0183-0.0486/ Piece US $ 0.0183-0.0486/ Piece US $ 0.0183-0.0486/ Piece US $ 0.0051-0.0156/ Piece
Min Order 10 Pieces 3000 Pieces 3000 Pieces 3000 Pieces 3000 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal, Money Gram T/T, Western Union, Paypal, Money Gram T/T, Western Union, Paypal, Money Gram T/T, Western Union, Paypal, Money Gram T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification - RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification GMP - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic Domestic Domestic Domestic
Annual Export Revenue - - - - -
Business Model OEM - - - -
Average Lead Time - - - - -
Product Attributes
Specification
Encapsulation Structure: Surface Mount;
Installation: SMD Triode;
Working Frequency: Other;
Power Level: Other;
Function: Mosfet;
Structure: Surface Mount;
Material: Silicon;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Low Frequency;
Power Level: Small Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: -40V;
V CEO: -25V;
V Ebo: -5V;
Package: Sot-23;
Case: Molded Plastic;
I C: -1.5A;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Low Frequency;
Power Level: Small Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: 50V;
V CEO: 45V;
V Ebo: 5V;
Package: Sot-23;
Case: Molded Plastic;
I C: 100mA;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Low Frequency;
Power Level: Small Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
V Cbo: 300V;
V CEO: 300V;
V Ebo: 5V;
Package: Sot-23;
Case: Molded Plastic;
I C: 300mA;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Medium Power;
Function: Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
I D: 1A;
V Dss: 60V;
Package: Sot-23;
Case: Molded Plastic;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier