Slj32PDA032X6 COM8.4 Slj32PDA032L7 COM8.4p Slj32PDA032L7 COM8.4p SMD-DIP Transistor

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1 Piece US$0.0001-0.10 / Piece

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Encapsulation Structure Plastic Sealed Transistor
  • Installation SMD Triode
  • Working Frequency High Frequency
  • Power Level Medium Power
  • Function Power Triode
  • Structure PNP
  • Material Silicon
  • Transport Package N/a
  • Specification DIP/SMD
  • Trademark N/A
  • Origin Original

Product Description

SLJ32PDA032X6 COM8.4 SLJ32PDA032L7 COM8.4P SLJ32PDA032L7 COM8.4P smd-dip transistor TYPE DESCRIBE IGP06N60T SLJ32PDA032X6 COM8.4 Package Tape and Reel (TR) Part status in stock Type Transistor Supplier device packaging SMD-DIP Q1: What services do you offer? We provide ...

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Slj32PDA032X6 COM8.4 Comparison
Transaction Info
Price US $ 0.0001-0.10/ Piece US $ 3.00-5.00/ Piece US $ 0.50-0.58/ Piece US $ 0.70-1.07/ Piece US $ 1.27-1.50/ Piece
Min Order 1 Pieces 100 Pieces 10 Pieces 1000 Pieces 10 Pieces
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC -
Management System Certification GMP - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue US$50 Million - US$100 Million - - - -
Business Model OEM - - - -
Average Lead Time - Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Product Attributes
Specification
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: Medium Power;
Function: Power Triode;
Structure: PNP;
Material: Silicon;
Encapsulation Structure: Plug-in Transistor;
Installation: Through Hole;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Switching Triode;
Structure: NPN;
Brand Name: Original;
Product Number: Fgl40n120;
Product: Transistor;
Category: IGBT;
IGBT Type: NPT;
Mounting Type: Through Hole;
Base Product Number: Fgl40n120and;
Encapsulation Structure: Plug-in Transistor;
Installation: Plug-in Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Switching Triode;
Structure: NPN;
Material: Silicon;
Brand Name: Original;
Lead Free Status: RoHS Compliant;
Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;
Condition: Brand Newand Original;
Conductive Mode: Enhanced;
Diode Use: Power Tube;
Use: MW/Microwave;
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: /;
Power Level: Medium Power;
Function: Power Triode, Switching Triode;
Structure: /;
Material: Germanium;
Brand Name: Original;
Mounting Type: Through Hole;
Pulsed Drain Current-Max (Idm): 92 a;
Ds Breakdown Voltage-Min: 500 V;
Fet Technology: Metal-Oxide Semiconductor;
Power Dissipation-Max (ABS): 315 W;
Transistor Application: Switching;
Encapsulation Structure: Chip Transistor;
Installation: /;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Structure: /;
Material: Plastic;
Collector Current-Max (IC): 60A;
Voltage - Collector Emitter Breakdown (M: 600 V;
Configuration: Single with Built-in Diode;
Transistor Application: Power Control;
Mounting Type: Through Hole;
Polarity/Channel Type: N-Channel;
Operating Temperature-Max: 175c;
Package: Tube;
Power - Max: 187 W;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier