Irf730pbf
US$0.001-0.10 / Piece
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Hot Sale Irf730pbf Irf740pbf Irf830pbf Irf840pbf Mosfet N-Channel 400V 5.5A (Tc) 74W (Tc) Video

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$0.10

1,000-9,999 Pieces US$0.01

10,000+ Pieces US$0.001

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Encapsulation Structure Chip Transistor
  • Installation SMD Triode
  • Working Frequency High Frequency
  • Power Level Medium Power
  • Function Photosensitive, Darlington Tube, Power Triode, Switching Triode, Triac
  • Structure PNP
  • Material Germanium
  • Transport Package Foam Packing
  • Specification Standard
  • Trademark Standard
  • Origin China
  • Fet Type Fet Type N-Channel
  • Drain to Source Voltage (Vdss) 400 V
  • RDS on (Max) @ ID, Vgs 1ohm @ 3.3A, 10V
  • Package / Case to-220-3

Product Description

Hot Sale IRF730PBF IRF740PBF IRF830PBF IRF840PBF MOSFET N-Channel 400V 5.5A (Tc) 74W (Tc) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400 V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds ...

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Irf730pbf Comparison
Transaction Info
Price US $ 0.001-0.10/ Piece US $ 3,500.00-3,600.00/ Piece US $ 3,500.00-3,600.00/ Piece US $ 3,500.00-3,600.00/ Piece US $ 3,500.00-4,000.00/ Piece
Min Order 10 Pieces 1 Pieces 1 Pieces 1 Pieces 1 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal, Money Gram T/T T/T T/T T/T
Quality Control
Product Certification RoHS, CE, ISO, CCC - - - -
Management System Certification GMP - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe - - - -
Annual Export Revenue - - - - -
Business Model OEM - - - -
Average Lead Time - - - - -
Product Attributes
Specification
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: Medium Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode, Triac;
Structure: PNP;
Material: Germanium;
Fet Type: Fet Type N-Channel;
Drain to Source Voltage (Vdss): 400 V;
RDS on (Max) @ ID, Vgs: 1ohm @ 3.3A, 10V;
Package / Case: to-220-3;
Installation: Vertical, Plate up or Down;
Function: Power Triode;
Material: Metal-Ceramic;
Installation: Vertical, Plate up or Down;
Function: Power Triode;
Material: Metal-Ceramic;
Installation: Vertical, Plate up or Down;
Function: Power Triode;
Material: Metal-Ceramic;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Valve Audio Connexion

China Supplier - Gold Member Audited Supplier

Valve Audio Connexion

China Supplier - Gold Member Audited Supplier

Valve Audio Connexion

China Supplier - Gold Member Audited Supplier

Valve Audio Connexion

China Supplier - Gold Member Audited Supplier