Bcr183e6433htma1 Bcr183e6327htsa1 Bcr169wh6327xtsa1 Sot-23 Transistor pictures & photos

Bcr183e6433htma1 Bcr183e6327htsa1 Bcr169wh6327xtsa1 Sot-23 Transistor

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Price

Min. Order Reference FOB Price

1 Piece US$0.0001-0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Plastic Sealed Transistor
Installation SMD Triode
Working Frequency High Frequency
Power Level Small Power
Function Power Triode
Structure PNP
Material Silicon
Transport Package N/a
Specification DIP/SMD
Trademark N/A
Origin Original

Product Description

BCR183E6433HTMA1 BCR183E6327HTSA1 BCR169WH6327XTSA1 SOT-23 transistor TYPE DESCRIBE IGP06N60T BCR183E6433HTMA1 Package Tape and Reel (TR) Part status in stock Type Transistor Supplier device packaging TO-252-2 Q1: What services do you offer? We provide turnkey solutions ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 4.8/5.0

(8 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC, PCBA
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Bcr183e6433htma1 Comparison

	Bcr183e6433htma1 Bcr183e6327htsa1 Bcr169wh6327xtsa1 Sot-23 Transistor Contact Now	High Frequency Heating Tube for Heating Industry 3cx10000d3 Contact Now	High Power Triode Valve for Industrial Hf Heating 3cx6000A7 Contact Now	Electronic Tube Used in Af or RF Applications as a Zero Grid Bias Amplifier 3cx10000A7 Contact Now	High Frequency Electronic Tube Itl3-1 Contact Now

Transaction Info
	Bcr183e6433htma1 Bcr183e6327htsa1 Bcr169wh6327xtsa1 Sot-23 Transistor Contact Now	High Frequency Heating Tube for Heating Industry 3cx10000d3 Contact Now	High Power Triode Valve for Industrial Hf Heating 3cx6000A7 Contact Now	Electronic Tube Used in Af or RF Applications as a Zero Grid Bias Amplifier 3cx10000A7 Contact Now	High Frequency Electronic Tube Itl3-1 Contact Now
Price	US $ 0.0001-0.10/ Piece	US $ 1,000.00-2,500.00/ Piece	US $ 700.00-1,700.00/ Piece	US $ 900.00-1,700.00/ Piece	US $ 800.00-1,500.00/ Piece
Min Order	1 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, CE, ISO, CCC	ISO	ISO	ISO	ISO
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	-	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Small Power; Function: Power Triode; Structure: PNP; Material: Silicon;	Encapsulation Structure: Metal-Ceramic; Working Frequency: High Frequency; Power Level: High Power; Function: High Frenquency Generator for Oscillator;	Encapsulation Structure: Metal-Ceramic; Working Frequency: High Frequency; Power Level: High Power; Function: High Frenquency Generator for Oscillator; Structure: Metal-Ceramic; Material: Metal-Ceramic;	Encapsulation Structure: Metal-Ceramic; Installation: Metal-Ceramic; Working Frequency: High Frequency; Power Level: High Power; Function: High Frenquency Generator for Oscillator; Structure: Metal-Ceramic; Material: Metal-Ceramic;	Encapsulation Structure: Metal-Ceramic; Installation: Metal-Ceramic; Working Frequency: High Frequency; Power Level: High Power; Function: High Frenquency Generator for Oscillator; Structure: Metal-Ceramic; Material: Metal-Ceramic;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Beijing Jenerator Electronic Co.,Ltd	Beijing Jenerator Electronic Co.,Ltd	Beijing Jenerator Electronic Co.,Ltd	Beijing Jenerator Electronic Co.,Ltd
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