Bom List NDS9948 Original Mosfet Transistor Array 60V 2.3A 900MW (We make PCB PCBA) pictures & photos

Bom List NDS9948 Original Mosfet Transistor Array 60V 2.3A 900MW (We make PCB PCBA)

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Price

Min. Order Reference FOB Price

100 Pieces US$0.20 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure SMD
Installation SMD Triode
Power Level Medium Power
Material Silicon
Transport Package Standard
Specification Standard
Origin Original
Fet Type Logic Level Gate
Technology Mosfet (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (ID) @25c 2.3A
RDS on (Max) @ ID, Vgs 250mohm @ 2.3A, 10V
Vgs(Th) (Max) @ ID 3V @ 250µa
Gate Charge (Qg) (Max) @ Vgs 13nc @ 10V
Input Capacitance (CISS) (Max) @ Vds 394PF @ 30V
Power - Max 900MW

Product Description

Bom list NDS9948 Original Mosfet Transistor Array 60V 2.3A 900mW (We make PCB PCBA) Provide bom serice/Contact for more than 100,000 components/PCB TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays Series PowerTrench® Package ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Electronic Component Comparison

	Bom List NDS9948 Original Mosfet Transistor Array 60V 2.3A 900MW (We make PCB PCBA) Contact Now	in Stock Fgh50n60 to-247 Original IGBT 600V 50A 50n60 Contact Now	Quick View Juxing Bc846b 80V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bc847c 50V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bss138 50V0.22A Sot-23 Plastic-Encapsulate Mosfet Contact Now

Transaction Info
	Bom List NDS9948 Original Mosfet Transistor Array 60V 2.3A 900MW (We make PCB PCBA) Contact Now	in Stock Fgh50n60 to-247 Original IGBT 600V 50A 50n60 Contact Now	Quick View Juxing Bc846b 80V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bc847c 50V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bss138 50V0.22A Sot-23 Plastic-Encapsulate Mosfet Contact Now
Price	US $ 0.2/ Piece	US $ 0.50-2.30/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.017-0.0289/ Piece
Min Order	100 Pieces	10 Pieces	3000 Pieces	3000 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	Domestic	Domestic	Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	-	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-
Product Attributes
Specification	Encapsulation Structure: SMD; Installation: SMD Triode; Power Level: Medium Power; Material: Silicon; Fet Type: Logic Level Gate; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60V; Current - Continuous Drain (ID) @25c: 2.3A; RDS on (Max) @ ID, Vgs: 250mohm @ 2.3A, 10V; Vgs(Th) (Max) @ ID: 3V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 13nc @ 10V; Input Capacitance (CISS) (Max) @ Vds: 394PF @ 30V; Power - Max: 900MW;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Function: Power Triode, IGBT; Material: Silicon; Collector-Emitter Voltage-Max: 600V; Condition: /; Product Number: Fgh50n60; Subcategory: Transistors; Description: IGBT 600V 50A; Category: IGBT; IGBT Type: Field Stop;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 80V; V CEO: 65V; V Ebo: 6V; Package: Sot-23; Case: Molded Plastic; I C: 100mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 50V; V CEO: 45V; V Ebo: 6V; Package: Sot-23; Case: Molded Plastic; I C: 100mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: 0.22A; V Dss: 50V; Package: Sot-23; Case: Molded Plastic;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
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