High Quality Irf640npbf N-Channel 200V 18A 150W Mosfet Transistor Irf640 Video
Price
Min. Order Reference FOB Price
1 Piece US$0.30 / Piece
Sepcifications
- Certification RoHS
- Encapsulation Structure Chip Transistor
- Installation SMD Triode
- Power Level Medium Power
- Structure Mosfet
- Material Silicon
- Transport Package Standard
- Specification Standard
- Origin Original
- Fet Type N-Channel
- Technology Mosfet (Metal Oxide)
- Drain to Source Voltage (Vdss) 200 V
- Current - Continuous Drain (ID) @ 25 18A (Tc)
- Drive Voltage (Max RDS on, Min RDS on) 10V
- RDS on (Max) @ ID, Vgs 150mohm @ 11A, 10V
- Vgs(Th) (Max) @ ID 4V @ 250µa
- Gate Charge (Qg) (Max) @ Vgs 67 Nc @ 10 V
- Vgs (Max) ±20V
- Input Capacitance (CISS) (Max) @ Vds 1160 PF @ 25 V
- Operating Temperature -55°c ~ 175°c (Tj)
- Mounting Type Through Hole
- Package / Case to-220ab
- Power Dissipation (Max) 150W (Tc)
- Supplier Device Package to-220-3
Product Description
High quality IRF640NPBF N-Channel 200V 18A 150W Mosfet Transistor IRF640 Provide bom serice / more than 100,000 types of electronic components TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series HEXFET® Package Tube Product ...
