Irf530n N Channel Transistor, Field Effect Tube, Triode, Industrial Application, Commercial Application pictures & photos

Irf530n N Channel Transistor, Field Effect Tube, Triode, Industrial Application, Commercial Application

Contact Now

Get Latest Price

About this Item

Price

Min. Order Reference FOB Price

100 Pieces US$0.13-0.23 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure Plastic Sealed Transistor
Installation Solder
Working Frequency Standard
Power Level Standard
Function Power Triode
Structure IC
Material Plastic , Iron
Transport Package Box
Specification TO-220
Origin Original

Product Description

Product Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well ...

Learn More

Yangjiang RUI XIAO Enterprise Co., Ltd.

Gold Member Since 2021

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Business Range Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters, Lights & Lighting, Tools & Hardware
Main Products Electronic Component, IC, Transistor, Diode, Capacitor, Resistor, Switch, Relay, LED/LCD, Module
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

IC Comparison

	Irf530n N Channel Transistor, Field Effect Tube, Triode, Industrial Application, Commercial Application Contact Now	Original IGBT Transistor Stgw40nc60V Ste40nc60 600V 80A 260W 40nc60 Contact Now	Sgt40n60npfdpn Spot Silan Micro Agent Welder Solar Inverter IGBT Contact Now	Sgt50t65fd1pn Original Silan Microagent 50A 650V Bipolar IGBT Transistor Contact Now	2sk1518 2sk1519 2sk1580 N-Channel 500 V 20A (Ta) 120W (Tc) Mosfet Transistor Contact Now

Transaction Info
	Irf530n N Channel Transistor, Field Effect Tube, Triode, Industrial Application, Commercial Application Contact Now	Original IGBT Transistor Stgw40nc60V Ste40nc60 600V 80A 260W 40nc60 Contact Now	Sgt40n60npfdpn Spot Silan Micro Agent Welder Solar Inverter IGBT Contact Now	Sgt50t65fd1pn Original Silan Microagent 50A 650V Bipolar IGBT Transistor Contact Now	2sk1518 2sk1519 2sk1580 N-Channel 500 V 20A (Ta) 120W (Tc) Mosfet Transistor Contact Now
Price	US $ 0.13-0.23/ Piece	US $ 2/ Piece	US $ 1.19-2.28/ Piece	US $ 1.19-2.28/ Piece	US $ 2/ Piece
Min Order	100 Pieces	1000 Pieces	100 Pieces	100 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS	RoHS	RoHS	RoHS	RoHS
Management System Certification	-	GMP	ISO 9001, GMP	ISO 9001, GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM, ODM	OEM, ODM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	-
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: Solder; Working Frequency: Standard; Power Level: Standard; Function: Power Triode; Structure: IC; Material: Plastic , Iron;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Material: Silicon; Voltage - Collector Emitter Breakdown (M: 600 V; Current - Collector (IC) (Max): 80 a; Vce(on) (Max) @ Vge, IC: 2.5V @ 15V, 40A; Power - Max: 260 W; Switching Energy: 330µj (on), 720µj (off); Input Type: Standard; Gate Charge: 214 Nc; Td (on/off) @ 25c: 43ns/140ns; Test Condition: 390V, 40A, 3.3ohm, 15V;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Structure: Planar; Material: Silicon;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Structure: Planar; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Structure: Mosfet; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 500 V; Current - Continuous Drain (ID) @ 25: 20A (Ta); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 270mohm @ 10A, 10V; Vgs(Th) (Max) @ ID: -; Vgs (Max): ±30V; Input Capacitance (CISS) (Max) @ Vds: 3050 PF @ 10 V; Operating Temperature: 150°c (Tj); Mounting Type: Through Hole; Package / Case: to-3p; Power Dissipation (Max): 120W (Tc); Supplier Device Package: to-220-3 Full Pack;
Supplier Name	Yangjiang RUI XIAO Enterprise Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Pharm-Genics (Jiangsu) Pharmaceutical Equipment Trading Co., Ltd.	Pharm-Genics (Jiangsu) Pharmaceutical Equipment Trading Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
Select All

Contact Now

Hot Search