Fga15n120antd IGBT Transistor Induction Cooker Power Transistor 1200V NPT Trench, Integrated Circuit, Electronic Components, Kitchen Equipment pictures & photos

Fga15n120antd IGBT Transistor Induction Cooker Power Transistor 1200V NPT Trench, Integrated Circuit, Electronic Components, Kitchen Equipment

Contact Now

Get Latest Price

About this Item

Price

Min. Order Reference FOB Price

100 Pieces US$0.64-0.80 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure Plastic Sealed Transistor
Installation Plug-in Triode
Power Level Medium and High Power
Function Power Triode, Switching Triode
Structure NPN
Material Silicon
Transport Package Box
Trademark Fairchild Semiconductor
Origin Make in China
Threshold Voltagerated Voltage (DC) 1.20 Kv
Number of Pins 3
Operating Temperature -55~ 150(Celsius)
Rated Current 15.0 a
Dissipated Power 186000 MW
Drain-Source Breakdown Voltage 1.20 Kv
Continuous Drain Current (IDS) 15.0 a
Reverse Recovery Time 330 Ns
Rated Power (Max) 186 W
Encapsulation to-3p
Packing Tube

Product Description

Product Description The FGA15N120ANTD is using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.This device is well suited for the resonant or soft ...

Learn More

Yangjiang RUI XIAO Enterprise Co., Ltd.

Gold Member Since 2021

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Business Range Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters, Lights & Lighting, Tools & Hardware
Main Products Electronic Component, IC, Transistor, Diode, Capacitor, Resistor, Switch, Relay, LED/LCD, Module
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Transistor Comparison

	Fga15n120antd IGBT Transistor Induction Cooker Power Transistor 1200V NPT Trench, Integrated Circuit, Electronic Components, Kitchen Equipment Contact Now	Plastic-Encapsulate Transistors Darlington Transistor (NPN) Contact Now	Irfb3077 Pbf N-Channel 75 V 120A (Tc) Mosfet Transistor Irf300 Irf3007 Contact Now	(8T85RB) High Poewr Vacuum Electron Tube Forced-Air Radio-Frequency Power-Amplifier Oscillator Triode Contact Now	(7T85RB) High Poewr Vacuum Electron Tube Forced-Air Radio-Frequency Power-Amplifier Oscillator Triode Contact Now

Transaction Info
	Fga15n120antd IGBT Transistor Induction Cooker Power Transistor 1200V NPT Trench, Integrated Circuit, Electronic Components, Kitchen Equipment Contact Now	Plastic-Encapsulate Transistors Darlington Transistor (NPN) Contact Now	Irfb3077 Pbf N-Channel 75 V 120A (Tc) Mosfet Transistor Irf300 Irf3007 Contact Now	(8T85RB) High Poewr Vacuum Electron Tube Forced-Air Radio-Frequency Power-Amplifier Oscillator Triode Contact Now	(7T85RB) High Poewr Vacuum Electron Tube Forced-Air Radio-Frequency Power-Amplifier Oscillator Triode Contact Now
Price	US $ 0.64-0.80/ Piece	US $ 0.23/ Piece	US $ 1/ Piece	US $ 500.00-600.00/ Piece	US $ 100.00-150.00/ Piece
Min Order	100 Pieces	200 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T	T/T, Western Union, Paypal	T/T	T/T
Quality Control
Product Certification	RoHS	-	-	-	-
Management System Certification	-	-	GMP	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	-	-
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	OEM	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Power Level: Medium and High Power; Function: Power Triode, Switching Triode; Structure: NPN; Material: Silicon; Threshold Voltagerated Voltage (DC): 1.20 Kv; Number of Pins: 3; Operating Temperature: -55~ 150(Celsius); Rated Current: 15.0 a; Dissipated Power: 186000 MW; Drain-Source Breakdown Voltage: 1.20 Kv; Continuous Drain Current (IDS): 15.0 a; Reverse Recovery Time: 330 Ns; Rated Power (Max): 186 W; Encapsulation: to-3p; Packing: Tube;	Encapsulation Structure: Other; Installation: Plug-in Triode; Power Level: Other; Function: Darlington Tube; Structure: NPN;	Fet Type: N-Channel; Drain to Source Voltage (Vdss): 75 V; Current - Continuous Drain (ID) @ 25: 120A (Tc); Power Dissipation (Max): 370W (Tc);	Installation: Vertical, Plate up or Down; Function: Power Triode; Material: Metal-Ceramic;	Installation: Vertical, Plate up or Down; Function: Power Triode; Material: Metal-Ceramic;
Supplier Name	Yangjiang RUI XIAO Enterprise Co., Ltd.	Shenzhen Airuixin Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Valve Audio Connexion	Valve Audio Connexion
Select All

Contact Now

Hot Search