2n3904 in-Line Power Transistor NPN, Transistor, Package to-92 Electronic Components pictures & photos

2n3904 in-Line Power Transistor NPN, Transistor, Package to-92 Electronic Components

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Price

Purchase Qty. Reference FOB Price

100-999 Pieces US$0.10

1,000+ Pieces US$0.023

Sepcifications

Certification RoHS
Encapsulation Structure Bipolar Transistor
Working Frequency Low Frequency
Power Level Small Power
Function Power Triode
Structure NPN
Material Silicon
Transport Package Box
Origin Make in China
Encapsulation to-92
Quality Good

Product Description

Product Description The 2N3904 is a through-hole mounting, NPN low-power, silicon planar switching transistor, TO-92 metal can package. This transistor has high-speed switching, so it is suitable for switches and amplifiers. Product Parameters Pin diagram : Package drawing : Features ...

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Yangjiang RUI XIAO Enterprise Co., Ltd.

Gold Member Since 2021

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Business Range Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters, Lights & Lighting, Tools & Hardware
Main Products Electronic Component, IC, Transistor, Diode, Capacitor, Resistor, Switch, Relay, LED/LCD, Module
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Power Amplifier Comparison

	2n3904 in-Line Power Transistor NPN, Transistor, Package to-92 Electronic Components Contact Now	Hg012n06h Hg012n06 012n06 Mosfet Transistor Contact Now	Original Tip42c Tip42 Bipolar (BJT) Transistor PNP 100V 6A 65W Contact Now	Quick View Juxing Bc807 50V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Fmmt493A 180V0.1A Plastic Encapsulate Transistor with Sot-23 Package Contact Now

Transaction Info
	2n3904 in-Line Power Transistor NPN, Transistor, Package to-92 Electronic Components Contact Now	Hg012n06h Hg012n06 012n06 Mosfet Transistor Contact Now	Original Tip42c Tip42 Bipolar (BJT) Transistor PNP 100V 6A 65W Contact Now	Quick View Juxing Bc807 50V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Fmmt493A 180V0.1A Plastic Encapsulate Transistor with Sot-23 Package Contact Now
Price	US $ 0.023-0.10/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0183-0.0286/ Piece
Min Order	100 Pieces	100 Pieces	100 Pieces	3000 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS	RoHS	RoHS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	GMP	GMP	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Domestic	Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Bipolar Transistor; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode; Structure: NPN; Material: Silicon; Encapsulation: to-92; Quality: Good;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Drain-Source Voltage (Ves = 0V): 60V; Continuous Drain Current: 50A; Pulsed Drain Current: 180A; Gatesource Voltage: 20V; Single Pulse Avalanche Energy: 20mj; Avalanche Current: 20A; Power Dissipation (T.= 25c ): 56.5W;	Encapsulation Structure: DIP; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Transistor Polarity: NPN; Current - Collector (IC) (Max): 6 a; Voltage - Collector Emitter Breakdown (M: 100 V; Vce Saturation (Max) @ Ib, IC: 1.5V @ 600mA, 6A; Current - Collector Cutoff (Max): 700µa; DC Current Gain (Hfe) (Min) @ IC, Vce: 15 @ 3A, 4V; Power - Max: 65 W; Operating Temperature: 150°c (Tj);	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 50V; V CEO: 45V; V Ebo: 5V; Package: Sot-23; Case: Molded Plastic; I C: 500mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 180V; V CEO: 160V; V Ebo: 6V; Package: Sot-23; Case: Molded Plastic; I C: 0.6A;
Supplier Name	Yangjiang RUI XIAO Enterprise Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
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