Zp 200 AMP to Zp 5000 AMP Standard Rectifier Diode High Current Rectifier Diode pictures & photos

Zp 200 AMP to Zp 5000 AMP Standard Rectifier Diode High Current Rectifier Diode

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Price

Min. Order Reference FOB Price

10 Pieces US$100.00 / Piece

Sepcifications

Application Diode, Industry
Batch Number 2020+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model Zp
Package SMD
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package Carton Box Depended on Qty
Specification packing box 400*300*200
Trademark SAILTON/STI
Origin China
Brand Sailton

Product Description

Zp 200 AMP to Zp 5000 AMP Standard Rectifier Diode High Current Rectifier Diode Rectifier diode,also named rectifying diode,include standard rectifier diode,power diode,fast recovery diode,high current diode. We manufacture and export a wide range of rectifier diode,current range from ...

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Sailing Commercial (Tianjin) Co., Ltd.

Diamond Member Since 2018

Audited Supplier

Rating & Reviews: 5.0/5.0

(23 Reviews)

Business Type Trading Company
Main Products Thyristor, Water Cooling Power Cable, Welding Diode, Semiconductor Device, High Voltage Control Cabinet
Year of Establishment 2017-11-15
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Semiconductor Comparison

	Zp 200 AMP to Zp 5000 AMP Standard Rectifier Diode High Current Rectifier Diode Contact Now	Quick View Si P Type 12inch Semiconductor Wafer Silicon Dummy Wafer Contact Now	Quick View Si Semiconductor 8 Inch Silicon Oxide Wafer Contact Now	Quick View 6 Inch N Type 150mm Semiconductors Silicon Oxide Wafer Contact Now	Quick View 6inch Semiconductor Wafer 50A 150mm Oxidized Silicon Wafer Contact Now

Transaction Info
	Zp 200 AMP to Zp 5000 AMP Standard Rectifier Diode High Current Rectifier Diode Contact Now	Quick View Si P Type 12inch Semiconductor Wafer Silicon Dummy Wafer Contact Now	Quick View Si Semiconductor 8 Inch Silicon Oxide Wafer Contact Now	Quick View 6 Inch N Type 150mm Semiconductors Silicon Oxide Wafer Contact Now	Quick View 6inch Semiconductor Wafer 50A 150mm Oxidized Silicon Wafer Contact Now
Price	US $ 100/ Piece	US $ 10.00-100.00/ pc	US $ 36.00-41.00/ pc	US $ 36.00-41.00/ pc	US $ 35.00-40.00/ pc
Min Order	10 Pieces	25 pc	100 pc	100 pc	100 pc
Payment Terms	L/C, T/T, Western Union, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	ISO 9001, ISO 29001	ISO 9001, ISO 29001	ISO 9001, ISO 29001	ISO 9001, ISO 29001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Eastern Asia, Western Europe	-	-	-	-
Annual Export Revenue	US$10 Million - US$50 Million	-	-	-	-
Business Model	OEM, ODM, Own Brand(SAILTON)	-	-	-	-
Average Lead Time	Off Season Lead Time: within 15 workdays Peak Season Lead Time: one month	-	-	-	-
Product Attributes
Specification	Application: Diode, Industry; Batch Number: 2020+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Zp; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Brand: Sailton;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 200±0.2mm; Thickness: 725±25mm; Oxide Thickness: 2000A; Ttv: ≤25μm; Warp: ≤40μm; Bow: ≤40μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 150±0.3mm; Thickness: 675±25mm; Oxide Thickness: 1000A; Ttv: ≤10μm; Warp: ≤30μm; Bow: ≤30μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 150±0.3mm; Thickness: 675±25mm; Oxide Thickness: 50A; Ttv: ≤10μm; Warp: ≤30μm; Bow: ≤30μm;
Supplier Name	Sailing Commercial (Tianjin) Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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