Semiconductor

US$30.00-35.00 / Piece

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Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers pictures & photos

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What is Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers

Name: Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers
Uploaded: 2021-01-20T13:24:39+08:00
Description: Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers Packing: Rectifier diode,also named rectifying diode,include standard rectifier diode,power diode,fast recovery

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Price

Min. Order Reference FOB Price

5 Pieces US$30.00-35.00 / Piece

Sepcifications

Application Diode, Industry
Batch Number 2020+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model Zp
Package SMD
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package Carton Box Depended on Qty
Specification packing box 400*300*200
Trademark SAILTON/STI
Origin China
Brand Sailton

Product Description

Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers Packing: Rectifier diode,also named rectifying diode,include standard rectifier diode,power diode,fast recovery diode,high current diode. We manufacture and export a wide range of rectifier ...

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Sailing Commercial (Tianjin) Co., Ltd.

Diamond Member Since 2018

Audited Supplier

Rating & Reviews: 5.0/5.0

(23 Reviews)

Business Type Trading Company
Main Products Thyristor, Water Cooling Power Cable, Welding Diode, Semiconductor Device, High Voltage Control Cabinet
Year of Establishment 2017-11-15
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Semiconductor Comparison

	Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers Contact Now	Quick View N/P Type 2inch 3inch 4inch 6inch Prime Grade Testing CZ Fz a-Si Undrop Poly Silicon Wafer Contact Now	Quick View Optical N/P-Type Sin Polished Silicon Single Crystal Si Semiconductor Wafer Contact Now	Quick View Factory Supply 2-4-6-8-12 Inch Far IR Silicon Si Wafer Crystals High Quality Si Wafer Contact Now	Quick View Diameter 2-12 Inch N/P Type Prime Quality Single Sided Polished Silicon Wafer Si for Scientific Research Contact Now

Transaction Info
	Disc Type Standare Recovery Diode Zp600A 2500V Optimized for Frequency Recifiers Contact Now	Quick View N/P Type 2inch 3inch 4inch 6inch Prime Grade Testing CZ Fz a-Si Undrop Poly Silicon Wafer Contact Now	Quick View Optical N/P-Type Sin Polished Silicon Single Crystal Si Semiconductor Wafer Contact Now	Quick View Factory Supply 2-4-6-8-12 Inch Far IR Silicon Si Wafer Crystals High Quality Si Wafer Contact Now	Quick View Diameter 2-12 Inch N/P Type Prime Quality Single Sided Polished Silicon Wafer Si for Scientific Research Contact Now
Price	US $ 30.00-35.00/ Piece	US $ 50.00-100.00/ pc	US $ 50.00-100.00/ pc	US $ 25/ pc	US $ 50.00-100.00/ pc
Min Order	5 Pieces	50 pc	50 pc	50 pc	50 pc
Payment Terms	L/C, T/T, Western Union, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	ISO 9001, ISO 29001	ISO 9001, ISO 29001	ISO 9001, ISO 29001	ISO 9001, ISO 29001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Eastern Asia, Western Europe	-	-	-	-
Annual Export Revenue	US$10 Million - US$50 Million	-	-	-	-
Business Model	OEM, ODM, Own Brand(SAILTON)	-	-	-	-
Average Lead Time	Off Season Lead Time: within 15 workdays Peak Season Lead Time: one month	-	-	-	-
Product Attributes
Specification	Application: Diode, Industry; Batch Number: 2020+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Zp; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Brand: Sailton;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;
Supplier Name	Sailing Commercial (Tianjin) Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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