Amplifier Power Tube (FU-84F, RU84B)

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Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC JINGGUANG
Origin China
Filament Voltage 12.6V
Filament Current 3.6A
Amplifcation Factor 4.2
Power 3000W
Working Position Vertical
Max Height 90mm
Max Diameter 70mm
Max Weight 420g
Cooling Forced Air

Product Description

FU-84F,GU-84B is a metal ceramic High Frequency RF Amplifier tube tetrode designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Amplifier Power Tube Comparison

	Amplifier Power Tube (FU-84F, RU84B) Contact Now	Field Effect Transistor Mosfet N-Channel 650V39A Ipw65r110cfd 65f6110A Contact Now	Ipw90r120c3 Infineon Mosfet N-Channel 9r120c Contact Now	Irfz24npbf New Best Selling High Quality Electronic Transistor Contact Now	Spp17n80c3 to-220 Field Effect Transistor Contact Now

Transaction Info
	Amplifier Power Tube (FU-84F, RU84B) Contact Now	Field Effect Transistor Mosfet N-Channel 650V39A Ipw65r110cfd 65f6110A Contact Now	Ipw90r120c3 Infineon Mosfet N-Channel 9r120c Contact Now	Irfz24npbf New Best Selling High Quality Electronic Transistor Contact Now	Spp17n80c3 to-220 Field Effect Transistor Contact Now
Price	Negotiable	US $ 5.74-12.09/ Piece	US $ 9.03/ Piece	US $ 0.36-1.60/ Piece	US $ 1.00-2.00/ Piece
Min Order	1 Pieces	500 Pieces	250 Pieces	10 Pieces	10 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	L/C, T/T, Western Union	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	-	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	-	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Other; Material: Metal Ceramic; Filament Voltage: 12.6V; Filament Current: 3.6A; Amplifcation Factor: 4.2; Power: 3000W; Working Position: Vertical; Max Height: 90mm; Max Diameter: 70mm; Max Weight: 420g; Cooling: Forced Air;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode, Switching Triode; Structure: Flat; Material: Germanium; Fet Type: N Channel; Ds Breakdown Voltage-Min: 650V; Technology: Mosfet (Metal Oxide); Installation Type: Through Hole; Product Number: Ipw65r110cfd; Category: Transistors - Fets, Mosfet; Drive Voltage (Max RDS on, Min RDS on): 10V; Fet Technology: Metal-Oxide Semiconductor; Gate Charge: (Qg) (Max) @ Vgs 118 Nc @ 10 V; Transistor Application: Switching;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Mosfet; Structure: /; Material: Plastic and Copper; Manufacturer Part Number: Ipw90r120c3; Product Category: Mosfet; Transistor Polarity: N-Channel; Vds - Drain-Source Breakdown Voltage: 900 V; Packaging: Tube; Brand: Infineon; Subcategory: Mosfet; Transistor Type: 1 N-Channel;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode, Switching Triode; Structure: Flat; Material: Germanium; Brand Name: Original; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Condition: Brand Newand Original; Inventory Status: Spot;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode, Switching Triode; Structure: Flat; Material: Germanium; Brand Name: Original; Installation Style: Throughhole; Condition: Brand Newand Original; Inventory Status: Spot; Package / Enclosure: Pg-To220-3; Fet Type: N-Channel; Transistor Polarity: N-Channel;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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