High Frequency Metal Ceramic Electron Vacuum Tube 3CW20000A7 pictures & photos

High Frequency Metal Ceramic Electron Vacuum Tube 3CW20000A7

Contact Now

Get Latest Price

About this Item

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC JINGGUANG
Origin China
Filament Voltage 7.5V
Filament Current 104A
Amplifcation Factor 200
Power 20kw
Working Position Vertical
Max Height 525.8mm
Max Diameter 171.4mm
Max Weight 5.5kg
Cooling Water and Forced Air

Product Description

3CW20000A7 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

Learn More

Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Electron Tube Comparison

	High Frequency Metal Ceramic Electron Vacuum Tube 3CW20000A7 Contact Now	Quick View Juxing 2sb772sq Silicon PNP Power Transistor with Sot-89 Package Contact Now	Tip147 Tip142 Bipolar (BJT) Transistor PNP-Darlington 100V 10A 125W to-247 Transistor Contact Now	Quick View Juxing Bcx56sq 100V1a Sot-89 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing D965 42V5a to-126 Plastic-Encapsulate Switching Transistors (NPN) Contact Now

Transaction Info
	High Frequency Metal Ceramic Electron Vacuum Tube 3CW20000A7 Contact Now	Quick View Juxing 2sb772sq Silicon PNP Power Transistor with Sot-89 Package Contact Now	Tip147 Tip142 Bipolar (BJT) Transistor PNP-Darlington 100V 10A 125W to-247 Transistor Contact Now	Quick View Juxing Bcx56sq 100V1a Sot-89 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing D965 42V5a to-126 Plastic-Encapsulate Switching Transistors (NPN) Contact Now
Price	Negotiable	US $ 0.0183-0.0286/ Piece	US $ 0.027-0.04/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0183-0.0486/ Piece
Min Order	1 Pieces	3000 Pieces	10 Pieces	3000 Pieces	3000 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	L/C, T/T, Paypal	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	-	RoHS, CE, ISO, CCC	RoHS, ISO	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	-	GMP	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Domestic	Domestic
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	-	OEM	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 7.5V; Filament Current: 104A; Amplifcation Factor: 200; Power: 20kw; Working Position: Vertical; Max Height: 525.8mm; Max Diameter: 171.4mm; Max Weight: 5.5kg; Cooling: Water and Forced Air;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 40V; V CEO: 30V; V Ebo: 5V; Package: Sot-89; Case: Molded Plastic; I C: 3A; I Cp: 7A; I B: 0.6A;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: PNP; Material: Standard; Standard Package: to-247; Mounting Type: Through Hole; Packaging: Tube; Transistor Type: PNP - Darlington;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 100V; V CEO: 80V; V Ebo: 5V; Package: Sot-89; Case: Molded Plastic; I C: 1A;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 42V; V CEO: 22V; V Ebo: 6V; Package: to-126; Case: Molded Plastic; I C: 5A;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	ShenZhen Nova Semiconductor Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
Select All

Contact Now

Hot Search