High Frequency Metal Ceramic Vacuum Triode (3CPX800A7) pictures & photos

High Frequency Metal Ceramic Vacuum Triode (3CPX800A7)

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About this Item

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Foam Packing
Installation Vertical
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 6V
Filament Current 1.5A
Mutual Conductance 50mA/V
Amplifcation Factor 13
Power 400W
Working Position Vertical
Max Height 62.5mm
Max Diameter 41.5mm
Max Weight 300g
Cooling Forced Air

Product Description

3CX800A7 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Ceramic Vacuum Tube Comparison

	High Frequency Metal Ceramic Vacuum Triode (3CPX800A7) Contact Now	2n2222A NPN Plastic Encapsulate Transistor 0.6A/30V Contact Now	Quick View SI2318CDS-T1-GE3 SI2318CDS trans mosfet transistor Contact Now	High Quality Transistors IGBT Trench 1350V 80A 429W Pg-To247-3 Ihw40n135r3 Contact Now	Ikw15n120t2 IGBT Transistor IC Original Product Contact Now

Transaction Info
	High Frequency Metal Ceramic Vacuum Triode (3CPX800A7) Contact Now	2n2222A NPN Plastic Encapsulate Transistor 0.6A/30V Contact Now	Quick View SI2318CDS-T1-GE3 SI2318CDS trans mosfet transistor Contact Now	High Quality Transistors IGBT Trench 1350V 80A 429W Pg-To247-3 Ihw40n135r3 Contact Now	Ikw15n120t2 IGBT Transistor IC Original Product Contact Now
Price	Negotiable	US $ 3.5/ Piece	US $ 0.12-15.00/ Piece	US $ 0.05-3.00/ Piece	US $ 0.50-0.80/ Piece
Min Order	1 Pieces	50 Pieces	100 Pieces	100 Pieces	10 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	-	RoHS	RoHS, CE, CCC	RoHS	-
Management System Certification	-	-	ISO 9001, FSC	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	-	OEM	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Foam Packing; Installation: Vertical; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 6V; Filament Current: 1.5A; Mutual Conductance: 50mA/V; Amplifcation Factor: 13; Power: 400W; Working Position: Vertical; Max Height: 62.5mm; Max Diameter: 41.5mm; Max Weight: 300g; Cooling: Forced Air;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Material: Plastic with Copper; Product Type: Bipolar Junction Transistor (Bjt); Transistor Polarity: NPN; Subcategory: Transistors; Packaging: Plug-in Transistor; Applicable Frequency: High Frequency Tube; Diode Use: Power Tube; Product Number: 2n2222A; DC Current Gain (Hfe) (Min) @ IC, Vce: 100 @ 150mA; Current - Collector (IC) (Max): 800mA;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Diffusion; Material: Silicon; MFG.: VISHAY; Quality: Genuine New Original; Package: SOT-23; D/C: 18+;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Function: Photosensitive, Darlington Tube; Structure: PNP; Configuration Type: PNP; Package Shape: P-Dit / Plastic Dual Inline; Conductive Mode: Depletion Type; IGBT Type: Single Tube; Product Type: Gbt Transistor; Installation Style: Through Hole; Product Number: Ihw40n135r3; Description: IGBT 1350V 80A 429W; Detailed Description: IGBT Trench 1350V 80A 429W; Category: Transistors; Input Type: Standard; Package: Tube;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Material: Plastic and Copper; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Semilotec Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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