High Frequency Vacuum Electron Triode (8T85RB) pictures & photos

High Frequency Vacuum Electron Triode (8T85RB)

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About this Item

Price

Min. Order Reference FOB Price

1 Piece US$1,300.00 / Piece

Sepcifications

Shape Metal Porcelain Tube
Cooling Method Air Cooled Tube
Working Frequency High Frequency
Structure Vertical
Encapsulation Structure Vertical
Power Level High Power
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 6.3V
Filament Current 35A
Amplifcation Factor 21
Max Power 5.1kw
Working Position Vertical
Max Height 230mm
Max Diameter 130mm
Max Weight 1.5kg
Cooling Forced Air

Product Description

8T85RB is a High frequency metal ceramic Power grid tube triode designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Electron Tube Comparison

	High Frequency Vacuum Electron Triode (8T85RB) Contact Now	Quick View RU3030M2 30V/30A PDFN3333 N-Channel Advanced Power MOSFET Semiconductor Diode MOS Contact Now	Quick View RUH4040M 40V 40A PDFN 5060 N-Channel Advanced Power MOSFET Contact Now	Quick View RU6888R 68V 88A N-Channel Advanced Power MOSFET Contact Now	Quick View 700V/11.7A 360mΩ HCFL70R360 N-Channel Advanced Power Mosfet Contact Now

Transaction Info
	High Frequency Vacuum Electron Triode (8T85RB) Contact Now	Quick View RU3030M2 30V/30A PDFN3333 N-Channel Advanced Power MOSFET Semiconductor Diode MOS Contact Now	Quick View RUH4040M 40V 40A PDFN 5060 N-Channel Advanced Power MOSFET Contact Now	Quick View RU6888R 68V 88A N-Channel Advanced Power MOSFET Contact Now	Quick View 700V/11.7A 360mΩ HCFL70R360 N-Channel Advanced Power Mosfet Contact Now
Price	US $ 1300/ Piece	US $ 0.07-0.08/ Piece	US $ 0.14-0.15/ Piece	US $ 0.16-0.20/ Piece	US $ 0.30-0.39/ Piece
Min Order	1 Pieces	5000 Pieces	5000 Pieces	1000 Pieces	3000 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	L/C, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	-	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: Metal Porcelain Tube; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Structure: Vertical; Encapsulation Structure: Vertical; Power Level: High Power; Material: Metal Ceramic; Filament Voltage: 6.3V; Filament Current: 35A; Amplifcation Factor: 21; Max Power: 5.1kw; Working Position: Vertical; Max Height: 230mm; Max Diameter: 130mm; Max Weight: 1.5kg; Cooling: Forced Air;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: LowRDS(on); Features2: Lowgatecharge(typ.Qg=41.9nC); Features3: 100%UIStested; Features4: RoHScompliant; Application3: Power Factor Correction (Pfc); Application4: Switchedmodepowersupplies.; Application6: LEDdriver.;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
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