RF Metal Ceramic Electronic Tube (3CPX800A7) pictures & photos

RF Metal Ceramic Electronic Tube (3CPX800A7)

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Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 13.5V
Filament Current 1.5A
Amplifcation Factor 200
Power 800W
Working Position Vertical
Max Height 64mm
Max Diameter 64.3mm
Max Weight 340g
Cooling Forced Air

Product Description

3CPX800A7 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Ceramic Vacuum Tube Comparison

	RF Metal Ceramic Electronic Tube (3CPX800A7) Contact Now	Sgt60t65fd1pn Silan Micro Welding Machine Power Supply IGBT 60t65fd Contact Now	Sgt75t65sdm1p7 Silan Microagent Original 75A 650V IGBT Contact Now	Sgm100hf12A3tfd Shilan Silan Original IGBT Module 1200V 100A Contact Now	Quick View Bd680 Bd681 Bd682 Bipolar (BJT) Transistor NPN Electornic Component Bom Service Contact Now

Transaction Info
	RF Metal Ceramic Electronic Tube (3CPX800A7) Contact Now	Sgt60t65fd1pn Silan Micro Welding Machine Power Supply IGBT 60t65fd Contact Now	Sgt75t65sdm1p7 Silan Microagent Original 75A 650V IGBT Contact Now	Sgm100hf12A3tfd Shilan Silan Original IGBT Module 1200V 100A Contact Now	Quick View Bd680 Bd681 Bd682 Bipolar (BJT) Transistor NPN Electornic Component Bom Service Contact Now
Price	Negotiable	US $ 1.19-2.28/ Piece	US $ 1.19-2.28/ Piece	US $ 1.19-2.28/ Piece	US $ 0.02/ Piece
Min Order	1 Pieces	100 Pieces	100 Pieces	100 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union
Quality Control
Product Certification	-	RoHS	RoHS	RoHS	RoHS
Management System Certification	-	ISO 9001, GMP	ISO 9001, GMP	ISO 9001, GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	-
Product Attributes
Specification	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 13.5V; Filament Current: 1.5A; Amplifcation Factor: 200; Power: 800W; Working Position: Vertical; Max Height: 64mm; Max Diameter: 64.3mm; Max Weight: 340g; Cooling: Forced Air;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Structure: Alloy; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Structure: Planar; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Structure: Planar; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Structure: NPN; Material: Silicon; Transistor Type: NPN - Darlington; Current - Collector (IC) (Max): 4 a; Voltage - Collector Emitter Breakdown (M: 100 V; Vce Saturation (Max) @ Ib, IC: 2.5V @ 30mA, 1.5A; Current - Collector Cutoff (Max): 500µa; DC Current Gain (Hfe) (Min) @ IC, Vce: 750 @ 1.5A, 3V; Power - Max: 40 W; Operating Temperature: 150°c (Tj); Mounting Type: Through Hole; Package / Case: to-225AA, to-126-3;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Pharm-Genics (Jiangsu) Pharmaceutical Equipment Trading Co., Ltd.	Pharm-Genics (Jiangsu) Pharmaceutical Equipment Trading Co., Ltd.	Pharm-Genics (Jiangsu) Pharmaceutical Equipment Trading Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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