High Frequency Metal Ceramic Heating Vacuum Valve (ITK60-2, ITK30-2)

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1 Piece US$5,000.00-6,000.00 / Piece

Sepcifications

  • Shape Metal Ceramic
  • Cooling Method Water Cooled Tube
  • Working Frequency High Frequency
  • Encapsulation Structure Other
  • Power Level High Power
  • Material Metal Ceramic
  • Transport Package Foam Packing
  • Specification Copper and ceramic
  • Trademark SETEC
  • Origin China
  • Filament Voltage 13V
  • Filament Current 250A
  • Amplifcation Factor 23
  • Max Power 130kw
  • Working Position Vertical
  • Max Height 386mm
  • Max Diameter 201mm
  • Max Weight 10.6kg
  • Cooling Water

Product Description

ITK60-2, it is metal ceramic structure, net thorium tungsten cathode, high power triode. The stem cooled by air; the anode cooled by water. The max working frequency 60MHz, the max anode dissipation power 70kW, the anode max working voltage 14kV. The max output power 180kW. The tube is mainly used ...

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Ceramic Heating Tube Comparison
Transaction Info
Price US $ 5,000.00-6,000.00/ Piece US $ 0.08/ Piece US $ 0.05/ Piece US $ 0.07/ Piece US $ 0.1/ Piece
Min Order 1 Pieces 100 Pieces 100 Pieces 100 Pieces 100 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification - RoHS RoHS RoHS RoHS
Management System Certification - GMP GMP GMP GMP
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue > US $100 Million - - - -
Business Model OEM, ODM OEM OEM OEM OEM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
- - - -
Product Attributes
Specification
Shape: Metal Ceramic;
Cooling Method: Water Cooled Tube;
Working Frequency: High Frequency;
Encapsulation Structure: Other;
Power Level: High Power;
Material: Metal Ceramic;
Filament Voltage: 13V;
Filament Current: 250A;
Amplifcation Factor: 23;
Max Power: 130kw;
Working Position: Vertical;
Max Height: 386mm;
Max Diameter: 201mm;
Max Weight: 10.6kg;
Cooling: Water;
Shape: DIP;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Material: Silicon;
Number of Channels: 1;
Voltage - Isolation: 5000vrms;
Current Transfer Ratio (Max): 1000% @ 1mA;
Turn on / Turn off Time (Typ): 110µs, 30µs;
Rise / Fall Time (Typ): 60µs, 30µs;
Input Type: DC;
Output Type: Darlington;
Voltage - Output (Max): 300V;
Current - Output / Channel: 150mA;
Voltage - Forward (Vf) (Typ): 1.25V;
Current - DC Forward (If) (Max): 50 Ma;
Vce Saturation (Max): 1.2V;
Operating Temperature: -55°c ~ 110°c;
Shape: SMD;
Structure: SMD;
Encapsulation Structure: Chip Transistor;
Material: Silicon;
Number of Channels: 1;
Voltage - Isolation: 3750vrms;
Current Transfer Ratio (Min): 200% @ 5mA;
Current Transfer Ratio (Max): 400% @ 5mA;
Rise / Fall Time (Typ): 4µs, 3µs;
Input Type: DC;
Output Type: Transistor;
Voltage - Output (Max): 80V;
Current - Output / Channel: 50mA;
Voltage - Forward (Vf) (Typ): 1.2V;
Current - DC Forward (If) (Max): 50 Ma;
Vce Saturation (Max): 200mv;
Operating Temperature: -55°c ~ 100°c;
Shape: SMD;
Structure: SMD;
Encapsulation Structure: Chip Transistor;
Material: Silicon;
Number of Channels: 1;
Voltage - Isolation: 5000vrms;
Common Mode Transient Immunity (Min): 5kv/µs;
Input Type: DC;
Output Type: Open Collector;
Current - Output / Channel: 50 Ma;
Data Rate: 10Mbps;
Propagation Delay Tplh / Tphl (Max): 75ns, 75ns;
Rise / Fall Time (Typ): 40ns, 10ns;
Voltage - Forward (Vf) (Typ): 1.4V;
Current - DC Forward (If) (Max): 50mA;
Voltage - Supply: 7V;
Shape: DIP;
Structure: DIP;
Encapsulation Structure: Chip Transistor;
Material: Silicon;
Number of Channels: 4;
Voltage - Isolation: 5300vrms;
Current Transfer Ratio (Min): 50% @ 5mA;
Current Transfer Ratio (Max): 600% @ 5mA;
Turn on / Turn off Time (Typ): 3µs, 3µs;
Rise / Fall Time (Typ): 2µs, 3µs;
Input Type: DC;
Output Type: Transistor;
Voltage - Output (Max): 55V;
Current - Output / Channel: 50mA;
Voltage - Forward (Vf) (Typ): 1.15V;
Current - DC Forward (If) (Max): 50 Ma;
Vce Saturation (Max): 400mv;
Operating Temperature: -30°c ~ 100°c;
Supplier Name

Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier