High Frequency Metal Ceramic Heating Electronic Triode (ITL9-1) pictures & photos

High Frequency Metal Ceramic Heating Electronic Triode (ITL9-1)

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About this Item

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 5.8V
Filament Current 145A
Amplifcation Factor 22
Max Power 25kw
Working Position Vertical
Max Height 220.5mm
Max Diameter 145mm
Max Weight 4.4kg
Cooling Forced Air

Product Description

ITL9-1 is a metal ceramic metal ceramic heating tube for welding machine designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tube may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Ceramic Vacuum Tube Comparison

	High Frequency Metal Ceramic Heating Electronic Triode (ITL9-1) Contact Now	in Stock Fgh50n60 to-247 Original IGBT 600V 50A 50n60 Contact Now	Quick View Juxing Bc846b 80V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bc847c 50V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bss138 50V0.22A Sot-23 Plastic-Encapsulate Mosfet Contact Now

Transaction Info
	High Frequency Metal Ceramic Heating Electronic Triode (ITL9-1) Contact Now	in Stock Fgh50n60 to-247 Original IGBT 600V 50A 50n60 Contact Now	Quick View Juxing Bc846b 80V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bc847c 50V0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now	Quick View Juxing Bss138 50V0.22A Sot-23 Plastic-Encapsulate Mosfet Contact Now
Price	Negotiable	US $ 0.50-2.30/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.017-0.0289/ Piece
Min Order	1 Pieces	10 Pieces	3000 Pieces	3000 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	-	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	Domestic	Domestic	Domestic
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	-	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-
Product Attributes
Specification	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 5.8V; Filament Current: 145A; Amplifcation Factor: 22; Max Power: 25kw; Working Position: Vertical; Max Height: 220.5mm; Max Diameter: 145mm; Max Weight: 4.4kg; Cooling: Forced Air;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Function: Power Triode, IGBT; Material: Silicon; Collector-Emitter Voltage-Max: 600V; Condition: /; Product Number: Fgh50n60; Subcategory: Transistors; Description: IGBT 600V 50A; Category: IGBT; IGBT Type: Field Stop;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 80V; V CEO: 65V; V Ebo: 6V; Package: Sot-23; Case: Molded Plastic; I C: 100mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 50V; V CEO: 45V; V Ebo: 6V; Package: Sot-23; Case: Molded Plastic; I C: 100mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: 0.22A; V Dss: 50V; Package: Sot-23; Case: Molded Plastic;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
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