High Frequency Machine Ceramic Amplifier Triode 3CX15000A7 pictures & photos

High Frequency Machine Ceramic Amplifier Triode 3CX15000A7

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About this Item

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 6.3V
Filament Current 160A
Amplifcation Factor 200
Power 15000W
Working Position Vertical
Max Height 222.3mm
Max Diameter 179.1mm
Max Weight 5.5kg
Cooling Forced Air

Product Description

3CX15000A7 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Electronic Valve Comparison

	High Frequency Machine Ceramic Amplifier Triode 3CX15000A7 Contact Now	IGBT Trench DIP Transistor Semi-Conductor Power Electronics Contact Now	Quick View Juxing D882 NPN Plastic Encapsulate Transistor with to-126 Package Contact Now	Quick View Juxing -4.1A -30V Ao3407 P-Channel Enhancement Mode Mosfet with Sot-23 Contact Now	Quick View Juxing Bc857b -50V-0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now

Transaction Info
	High Frequency Machine Ceramic Amplifier Triode 3CX15000A7 Contact Now	IGBT Trench DIP Transistor Semi-Conductor Power Electronics Contact Now	Quick View Juxing D882 NPN Plastic Encapsulate Transistor with to-126 Package Contact Now	Quick View Juxing -4.1A -30V Ao3407 P-Channel Enhancement Mode Mosfet with Sot-23 Contact Now	Quick View Juxing Bc857b -50V-0.1A Sot-23 Plastic-Encapsulate Transistors (NPN) Contact Now
Price	Negotiable	US $ 1.00-5.00/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.017-0.0289/ Piece	US $ 0.0183-0.0486/ Piece
Min Order	1 Pieces	10 Pieces	3000 Pieces	3000 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, Western Union, Paypal	L/C, T/T, D/P, Paypal, Money Gram, x-transfer	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	-	RoHS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	ISO 9001	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, Eastern Europe, Oceania, Western Europe	Domestic	Domestic	Domestic
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	OEM, ODM	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1-3 Month(s)	-	-	-
Product Attributes
Specification	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 6.3V; Filament Current: 160A; Amplifcation Factor: 200; Power: 15000W; Working Position: Vertical; Max Height: 222.3mm; Max Diameter: 179.1mm; Max Weight: 5.5kg; Cooling: Forced Air;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Structure: Planar;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 40V; V CEO: 30V; V Ebo: 6V; Package: to-126; Case: Molded Plastic; I C: 3A;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: -4.1A; V Dss: -30V; Package: Sot-23; Case: Molded Plastic;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: -50V; V CEO: -45V; V Ebo: -6V; Package: Sot-23; Case: Molded Plastic; I C: -100mA;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Shanghai Cesheng Textile Co.,Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
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