High Power Metal Ceramic Triode Vacuum Valve Electronic Tube (3CW40000H3) pictures & photos

High Power Metal Ceramic Triode Vacuum Valve Electronic Tube (3CW40000H3)

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About this Item

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Installation Vertical,Plate Down
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 10V
Filament Current 160A
Amplifcation Factor 20
Power 40000W
Working Position Vertical
Max Height 539.2mm
Max Diameter 171.4mm
Max Weight 6.4kg
Cooling Water and Forced Air

Product Description

3CW40000H3 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Ceramic Vacuum Tube Comparison

	High Power Metal Ceramic Triode Vacuum Valve Electronic Tube (3CW40000H3) Contact Now	Transistors 2n4403 2n5401 2n5551 2n7000 in Stock Contact Now	Transistors Bc547 Bc548 Bc549 Bc557 Bc558 Bc559 Bd139 Bd140 in Stock Contact Now	Transistors Mje340 Mje350 Irf3205 Irfz44n Irf540n Irf9540 in Stock Contact Now	Quick View Low Cost Mmbt3904 Bipolar (BJT) Transistor NPN 40V 200mA Contact Now

Transaction Info
	High Power Metal Ceramic Triode Vacuum Valve Electronic Tube (3CW40000H3) Contact Now	Transistors 2n4403 2n5401 2n5551 2n7000 in Stock Contact Now	Transistors Bc547 Bc548 Bc549 Bc557 Bc558 Bc559 Bd139 Bd140 in Stock Contact Now	Transistors Mje340 Mje350 Irf3205 Irfz44n Irf540n Irf9540 in Stock Contact Now	Quick View Low Cost Mmbt3904 Bipolar (BJT) Transistor NPN 40V 200mA Contact Now
Price	Negotiable	US $ 0.10-1.00/ Piece	US $ 0.10-1.00/ Piece	US $ 0.10-1.00/ Piece	US $ 0.008/ Piece
Min Order	1 Pieces	10 Pieces	10 Pieces	10 Pieces	1 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union
Quality Control
Product Certification	-	N/a	N/a	N/a	RoHS
Management System Certification	-	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Other; Installation: Vertical,Plate Down; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 10V; Filament Current: 160A; Amplifcation Factor: 20; Power: 40000W; Working Position: Vertical; Max Height: 539.2mm; Max Diameter: 171.4mm; Max Weight: 6.4kg; Cooling: Water and Forced Air;	Encapsulation Structure: N/a; Installation: N/a; Working Frequency: N/a; Power Level: N/a; Function: N/a; Structure: PNP; Material: N/a; Type: Transistors; Brand: Original; Company: Nova; PCBA: Support; PCB: Support; SMT: Support; Bom: Support;	Encapsulation Structure: N/a; Installation: N/a; Working Frequency: N/a; Power Level: N/a; Function: N/a; Structure: PNP; Material: N/a; Type: Transistors; Brand: Original; Company: Nova; PCBA: Support; PCB: Support; SMT: Support; Bom: Support;	Encapsulation Structure: N/a; Installation: N/a; Working Frequency: N/a; Power Level: N/a; Function: N/a; Structure: PNP; Material: N/a; Type: Transistors; Brand: Original; Company: Nova; PCBA: Support; PCB: Support; SMT: Support; Bom: Support;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Structure: NPN; Material: Silicon; Transistor Type: NPN; Current - Collector (IC) (Max): 200 Ma; Voltage - Collector Emitter Breakdown (M: 40 V; Vce Saturation (Max) @ Ib, IC: 300mv @ 5mA, 50mA; Current - Collector Cutoff (Max): 50na (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 100 @ 10mA, 1V; Power - Max: 250 MW; Operating Temperature: 150°c (Tj); Mounting Type: Surface Mount; Package / Case: to-236-3, Sc-59, Sot-23-3;
Supplier Name	Ningbo Setec Electron Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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