Stth112ufy

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Original Integrated Circuits Stth112ufy 1.9V@1A Null Null 1200V Smbflat Fast Recovery/High Efficiency Diode RoHS Bom Service pictures & photos

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What is Original Integrated Circuits Stth112ufy 1.9V@1A Null Null 1200V Smbflat Fast Recovery/High Efficiency Diode RoHS Bom Service

Name: Original Integrated Circuits Stth112ufy 1.9V@1A Null Null 1200V Smbflat Fast Recovery/High Efficiency Diode RoHS Bom Service
Uploaded: 2024-02-21T16:26:56+08:00
Description: Original Integrated Circuits STTH112UFY 1.9V@1A null null 1200V SMBflat Fast recovery/high efficiency diode ROHS bom service TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs

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About this Item

Price

Min. Order Reference FOB Price

10 Pieces US$0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO
Shape ST
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method -
Function -
Working Frequency -
Structure -
Encapsulation Structure Chip Transistor
Power Level -
Material Germanium
Transport Package Package
Specification SMA/SMB/SMC/SOD-123FL
Trademark Original
Origin Original

Product Description

Original Integrated Circuits STTH112UFY 1.9V@1A null null 1200V SMBflat Fast recovery/high efficiency diode ROHS bom service TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Diode FAQ Q1: Does your company own manufacturing facilities for electronic ...

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Shenzhen Hongjilong Technology Co., Ltd.

Diamond Member Since 2023

Audited Supplier

Rating & Reviews： 5.0/5.0

(2 Reviews)

Business Type Manufacturer/Factory
Main Products Electronic Components; Transistor; Diode; Triode; Integrated Circuit; PCBA; Mosfet; Resstor; Capacitor
Number of Employees 43
Year of Establishment 2010-11-03
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Stth112ufy Comparison

	Quick View Original Integrated Circuits Stth112ufy 1.9V@1A Null Null 1200V Smbflat Fast Recovery/High Efficiency Diode RoHS Bom Service Contact Now	Mbrs1100t3g Single Rectifier Diode Schottky 100 V 1A SMD SMB Mbrs1100 Contact Now	Quick View IGBT VCE-650V IC-50A VCE(SAT) IC=50A 1.95V fetures applications Positive temperature coefficient DGW50N65BTH Contact Now	Si4202dy-T1-Ge3 Mosfet Array Transistor 2 N-Channel (Dual) 30V 12.1A 3.7W SMD 8-Soic Si4202 Si4204dy Si4226dy Si4286dy Contact Now	Fqp4p40 Mosfet Transistor P-Channel 400 V 3.5A (Tc) 85W (Tc) DIP to-220-3 Fqp4 Contact Now

Transaction Info
	Quick View Original Integrated Circuits Stth112ufy 1.9V@1A Null Null 1200V Smbflat Fast Recovery/High Efficiency Diode RoHS Bom Service Contact Now	Mbrs1100t3g Single Rectifier Diode Schottky 100 V 1A SMD SMB Mbrs1100 Contact Now	Quick View IGBT VCE-650V IC-50A VCE(SAT) IC=50A 1.95V fetures applications Positive temperature coefficient DGW50N65BTH Contact Now	Si4202dy-T1-Ge3 Mosfet Array Transistor 2 N-Channel (Dual) 30V 12.1A 3.7W SMD 8-Soic Si4202 Si4204dy Si4226dy Si4286dy Contact Now	Fqp4p40 Mosfet Transistor P-Channel 400 V 3.5A (Tc) 85W (Tc) DIP to-220-3 Fqp4 Contact Now
Price	US $ 0.1/ Piece	US $ 0.01-1.00/ Piece	US $ 1.91/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece
Min Order	10 Pieces	1 Pieces	1000 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO	-	RoHS	-	-
Management System Certification	ISO 9001	GMP	-	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM, ODM	OEM	OEM
Average Lead Time	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-
Product Attributes
Specification	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: SMD; Function: Single Rectifier Diode; Diode Type: Schottky; Voltage - DC Reverse (Vr) (Max): 100 V; Current - Average Rectified (Io): 1A; Voltage - Forward (Vf) (Max) @ If: 750 Mv @ 1 a; Speed: Fast Recovery =< 500ns, > 200mA (Io); Current - Reverse Leakage @ Vr: 500 µa @ 100 V; Mounting Type: Surface Mount; Supplier Device Package: Do-214AA, SMB; Package / Case: SMB; Base Product Number: Mbrs1100; Operating Temperature - Junction: -65°c ~ 175°c;	Function: Switch Transistor; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: SMD; Function: Mosfet; Fet Type: 2 N-Channel (Dual); Fet Feature: Logic Level Gate; Drain to Source Voltage (Vdss): 30V; Continuous Drain (ID) @ 25°c: 12.1A; RDS on (Max) @ ID, Vgs: 14mohm @ 8A, 10V; Vgs(Th) (Max) @ ID: 2.5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 17nc @ 10V; Vgs (Max): 2.5V @ 250µa; Input Capacitance (CISS) (Max) @ Vds: 710PF @ 15V; Power - Max: 3.7W; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: 8-Soic; Base Product Number: Si4202;	Shape: DIP; Function: Mosfet; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 400 V; Continuous Drain (ID) @ 25°c: 3.5A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 3.1ohm @ 1.75A, 10V; Vgs(Th) (Max) @ ID: 5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 23 Nc @ 10 V; Vgs (Max): ±30V; Input Capacitance (CISS) (Max) @ Vds: 680 PF @ 25 V; Power Dissipation (Max): 85W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: to-220-3; Supplier Device Package: to-220-3; Base Product Number: Fqp4;
Supplier Name	Shenzhen Hongjilong Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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