Nsvrb751s40t1g
US$0.10 / Piece
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What is Original Integrated Circuits Nsvrb751s40t1g 30V Single 30mA 280mv@1mA SOD-523 Schottky Barrier Diodes (SBD) RoHS Bom Service

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

10 Pieces US$0.10 / Piece

Sepcifications

  • Certification RoHS, CE, ISO
  • Shape ST
  • Shielding Type Remote Cut-Off Shielding Tube
  • Cooling Method -
  • Function -
  • Working Frequency -
  • Structure -
  • Encapsulation Structure Chip Transistor
  • Power Level -
  • Material Germanium
  • Transport Package Package
  • Specification SMA/SMB/SMC/SOD-123FL
  • Trademark Original
  • Origin Original

Product Description

Original Integrated Circuits NSVRB751S40T1G 30V Single 30mA 280mV@1mA SOD-523 Schottky Barrier Diodes (SBD) ROHS bom service TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Diode FAQ Q1: Does your company own manufacturing facilities for electronic ...

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Nsvrb751s40t1g Comparison
Transaction Info
Price US $ 0.1/ Piece US $ 1.91/ Piece US $ 0.01-1.00/ Piece US $ 0.01-1.00/ Piece US $ 0.77/ Piece
Min Order 10 Pieces 1000 Pieces 1 Pieces 1 Pieces 1000 Pieces
Trade Terms - - - - -
Payment Terms T/T, Paypal L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS, CE, ISO RoHS - - RoHS
Management System Certification ISO 9001 - GMP GMP -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model - OEM, ODM OEM OEM OEM, ODM
Average Lead Time - Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- - Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: -;
Function: -;
Working Frequency: -;
Structure: -;
Encapsulation Structure: Chip Transistor;
Power Level: -;
Material: Germanium;
Function: Switch Transistor;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Shape: SMD;
Function: Mosfet;
Fet Type: 2 N-Channel (Dual);
Fet Feature: Logic Level Gate;
Drain to Source Voltage (Vdss): 30V;
Continuous Drain (ID) @ 25°c: 12.1A;
RDS on (Max) @ ID, Vgs: 14mohm @ 8A, 10V;
Vgs(Th) (Max) @ ID: 2.5V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 17nc @ 10V;
Vgs (Max): 2.5V @ 250µa;
Input Capacitance (CISS) (Max) @ Vds: 710PF @ 15V;
Power - Max: 3.7W;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: 8-Soic;
Base Product Number: Si4202;
Shape: DIP;
Function: Mosfet;
Fet Type: P-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 400 V;
Continuous Drain (ID) @ 25°c: 3.5A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 3.1ohm @ 1.75A, 10V;
Vgs(Th) (Max) @ ID: 5V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 23 Nc @ 10 V;
Vgs (Max): ±30V;
Input Capacitance (CISS) (Max) @ Vds: 680 PF @ 25 V;
Power Dissipation (Max): 85W (Tc);
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: to-220-3;
Supplier Device Package: to-220-3;
Base Product Number: Fqp4;
Function: Switch Transistor;
Encapsulation Structure: TO-252;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Supplier Name

Shenzhen Hongjilong Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier