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Juxing -2.8A -20V Si2301 P-Channel Enhancement Mode Mosfet with Sot-23 pictures & photos

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What is Juxing -2.8A -20V Si2301 P-Channel Enhancement Mode Mosfet with Sot-23

Name: Juxing -2.8A -20V Si2301 P-Channel Enhancement Mode Mosfet with Sot-23
Uploaded: 2023-11-28T10:46:55+08:00
Description: Product Description A MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of semiconductor device that is widely used in electronic circuits for switching and ampli

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Price

Min. Order Reference FOB Price

3000 Pieces US$0.0055-0.0156 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Plastic Sealed Transistor
Installation Plug-in Triode
Working Frequency Low Frequency
Power Level Medium Power
Function Power Triode, Switching Triode
Structure Planar
Material Silicon
Transport Package Tr/Re/CRT
Specification 3K/TR
Trademark JUXING
Origin China
I D -3A
V Dss -20V
Package Sot-23
Case Molded Plastic

Product Description

Product Description A MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of semiconductor device that is widely used in electronic circuits for switching and amplification purposes. It's a fundamental component in modern integrated circuits and plays a crucial ...

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Guangdong Juxing Electronics Technology Co., Ltd

Diamond Member Since 2023

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Diode, Transistor
Number of Employees 16
Year of Establishment 2003-10-09
Management System Certification ISO9001:2015
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: within 15 workdays

Mosfet Comparison

	Quick View Juxing -2.8A -20V Si2301 P-Channel Enhancement Mode Mosfet with Sot-23 Contact Now	Quick View Original Aon6404 N-Channel 30V 25A (Ta) , 85A (Tc) Mosfet Transistor Contact Now	Quick View Original Eld217 (TA) Optoisolator Transistor Output 3750vrms 2 Channel 8-Sop Eld217 Contact Now	Quick View Original Mosfet P-Channel 200 V 11A 125W Through Hole to-220ab To220ab Irf9640 Contact Now	Quick View Original Mosfet Irfsl3306pbf N-Channel 60 V 120A 230W Through Hole to-262 Irfsl3306 Contact Now

Transaction Info
	Quick View Juxing -2.8A -20V Si2301 P-Channel Enhancement Mode Mosfet with Sot-23 Contact Now	Quick View Original Aon6404 N-Channel 30V 25A (Ta) , 85A (Tc) Mosfet Transistor Contact Now	Quick View Original Eld217 (TA) Optoisolator Transistor Output 3750vrms 2 Channel 8-Sop Eld217 Contact Now	Quick View Original Mosfet P-Channel 200 V 11A 125W Through Hole to-220ab To220ab Irf9640 Contact Now	Quick View Original Mosfet Irfsl3306pbf N-Channel 60 V 120A 230W Through Hole to-262 Irfsl3306 Contact Now
Price	US $ 0.0055-0.0156/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	3000 Pieces	100 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union	T/T, Western Union	T/T, Western Union
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS	ISO	ISO	ISO
Management System Certification	-	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM	OEM	OEM
Average Lead Time	-	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: -3A; V Dss: -20V; Package: Sot-23; Case: Molded Plastic;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 30 V; Current - Continuous Drain (ID) @25c: 25A (Ta), 85A (Tc); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 2.2mohm @ 20A, 10V; Vgs(Th) (Max) @ ID: 2V @ 250µa; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 9000 PF @ 15 V; Power Dissipation (Max): 2.1W (Ta), 83W (Tc);	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Darlington Tube; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Number of Channels: 2; Voltage - Isolation: 3750vrms; Current Transfer Ratio (Min): 100% @ 1mA; Rise / Fall Time (Typ): 1.6µs, 2.2µs; Input Type: DC; Output Type: Transistor;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Switching Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 200 V; Current - Continuous Drain (ID): 11A (Tc); RDS on (Max) @ ID, Vgs: 500mohm @ 6.6A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Vgs (Max): ±20V;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 4520 PF @ 50 V; Power Dissipation (Max): 230W (Tc); Operating Temperature: -55°c ~ 175°c (Tj);
Supplier Name	Guangdong Juxing Electronics Technology Co., Ltd	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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