Juxing 90A20V Jx2090K N-Channel Enhancement Mode Mosfet with to-252 Video

Name: Juxing 90A20V Jx2090K N-Channel Enhancement Mode Mosfet with to-252
Uploaded: 2023-11-28T10:46:55+08:00
Description: Product Description A MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of semiconductor device that is widely used in electronic circuits for switching and ampli

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Price

Min. Order Reference FOB Price

3000 Pieces US$0.0055-0.0156 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Plastic Sealed Transistor
Installation SMD Triode
Working Frequency Low Frequency
Power Level Medium Power
Function Power Triode, Switching Triode
Structure Planar
Material Silicon
Transport Package Tr/Re/CRT
Specification 2.5K/TR
Trademark JUXING
Origin China
I D 90A
V Dss 20V
Package to-252
Case Molded Plastic

Product Description

Product Description A MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of semiconductor device that is widely used in electronic circuits for switching and amplification purposes. It's a fundamental component in modern integrated circuits and plays a crucial ...

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Guangdong Juxing Electronics Technology Co., Ltd

Diamond Member Since 2023

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Diode, Transistor
Number of Employees 16
Year of Establishment 2003-10-09
Management System Certification ISO9001:2015
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: within 15 workdays

Mosfet Comparison

	Quick View Juxing 90A20V Jx2090K N-Channel Enhancement Mode Mosfet with to-252 Contact Now	Quick View H25r1203 High Power IGBT 25A1200V Induction Cooker Transistor Contact Now	Power MOS Field Effect Transistor Ika15n60t Contact Now	Ikw20n60t K20t60 20A 600V to-247 IGBT Power Transistor Contact Now	Ikw25n120t2 Ikw25t120 K25t1202 25A 1200V Power IGBT Contact Now

Transaction Info
	Quick View Juxing 90A20V Jx2090K N-Channel Enhancement Mode Mosfet with to-252 Contact Now	Quick View H25r1203 High Power IGBT 25A1200V Induction Cooker Transistor Contact Now	Power MOS Field Effect Transistor Ika15n60t Contact Now	Ikw20n60t K20t60 20A 600V to-247 IGBT Power Transistor Contact Now	Ikw25n120t2 Ikw25t120 K25t1202 25A 1200V Power IGBT Contact Now
Price	US $ 0.0055-0.0156/ Piece	US $ 7.5/ Piece	US $ 0.80-2.00/ Piece	US $ 0.30-2.00/ Piece	US $ 5.14-6.27/ Piece
Min Order	3000 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS	-	-	-
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	Domestic	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	-	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: 90A; V Dss: 20V; Package: to-252; Case: Molded Plastic;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Photosensitive, Power Triode, IGBT; Structure: Alloy; Material: Silicon; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Configuration Type: Diode; Category: Transistors - IGBT; IGBT Type: NPT; Vce(on) (Max) @ Vge, IC: 1.8V @ 15V, 25A; Input Type: Standard; Test Condition: 600V, 25A, 10ohm, 15V; Voltage - Collector Emitter Breakdown: 1200 V; Power - Max: 365 W;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Material: Plastic and Copper; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Function: Darlington Tube, Power Triode; Structure: Alloy; Material: Silicon; Product Number: Ikw20n60t; Configuration Type: Inline; Detailed Description: IGBT; Category: IGBT Transistor;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Description: IGBT Transistors Low Loss Duopack 1200V 25A; Mfr. #: Ikw25n120t2; Product Category: IGBT Transistors; Product: Transistors; Series: /;
Supplier Name	Guangdong Juxing Electronics Technology Co., Ltd	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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