IGBT

US$0.01-1.50 / Piece

View

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 pictures & photos

Recommend for you
What is 5A 650V N-Channel Enhancement Mode Power Mosfet 5n65c
What is 30A 200V Schottky Barrier Diode Mbr30100CT to-220 & Mbr30100nct to-3pn
What is 68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to-247-3L

What is 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247

Name: 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
Uploaded: 2023-10-09T15:48:48+08:00
Description: PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed Colle

Contact Now

Get Latest Price

About this Item

Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Silicon
Type N-type Semiconductor
Package to-247
Application Welding, UPS
Model Dgc40h120m2
Batch Number 2023
Brand Wxdh
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 1200V
Current 40A

Product Description

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed Collector Current ICM 160 A Diode Continuous Forward Current IF @TC = 100 ...

Learn More

Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

IGBT Comparison

	Quick View 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Contact Now	Quick View 15A 60V N-Channel Enhancement Mode Power Mosfet Dhz24 to-220 Contact Now	Quick View 2A 500V N-Channel Super Junction Power Mosfet Dsj2n50 to-252 Contact Now	Quick View 150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263 Contact Now	Quick View 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 Contact Now

Transaction Info
	Quick View 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Contact Now	Quick View 15A 60V N-Channel Enhancement Mode Power Mosfet Dhz24 to-220 Contact Now	Quick View 2A 500V N-Channel Super Junction Power Mosfet Dsj2n50 to-252 Contact Now	Quick View 150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263 Contact Now	Quick View 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 Contact Now
Price	US $ 0.01-1.50/ Piece	US $ 0.01-0.20/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece
Min Order	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-247; Application: Welding, UPS; Model: Dgc40h120m2; Batch Number: 2023; Brand: Wxdh; Voltage: 1200V; Current: 40A;	Voltage: 60V; Currency: 15A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-220; Application: Power Switching, Converters, Full Bridge Control; Batch Number: 2021; Brand: Wxdh; Model: Dhz24;	Voltage: 500V; Current: 2A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-252; Application: Power Supply; Model: Dsj2n50; Batch Number: 2021; Brand: Wxdh;	Voltage: 80V; Current: 150A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-263; Application: Power Switching; Model: E150n08; Batch Number: 2021; Brand: Wxdh;	Voltage: 60V; Current: 85A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-252; Application: Power Switching, Converters, Full Bridge Control; Model: Dhs065n06D; Batch Number: 2021; Brand: Wxdh;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
Select All

Contact Now

Hot Search