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40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d pictures & photos

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What is 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d

Name: 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
Uploaded: 2023-08-29T16:39:26+08:00
Description: PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed Coll

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Silicon
Type N-type Semiconductor
Package to-247
Application Welding, UPS
Model G40n120d
Batch Number 2023
Brand Wxdh
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 1200V
Current 40A

Product Description

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed Collector Current ICM 160 A Diode Continuous Forward Current IF @TJ = 100 ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

IGBT Comparison

	Quick View 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Contact Now	Quick View 60A 600V Fast Recovery Diode Mur60fu60nct to-3pn Contact Now	Quick View 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b Contact Now	Quick View 220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6 Contact Now	Quick View 130A 85V N-Channel Enhancement Mode Power Mosfet DSP038n08na Dfn5X6 Contact Now

Transaction Info
	Quick View 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Contact Now	Quick View 60A 600V Fast Recovery Diode Mur60fu60nct to-3pn Contact Now	Quick View 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b Contact Now	Quick View 220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6 Contact Now	Quick View 130A 85V N-Channel Enhancement Mode Power Mosfet DSP038n08na Dfn5X6 Contact Now
Price	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.22/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece
Min Order	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-247; Application: Welding, UPS; Model: G40n120d; Batch Number: 2023; Brand: Wxdh; Voltage: 1200V; Current: 40A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3pn; Application: Switching Power Supply; Model: Mur60fu60nct; Batch Number: 2023; Brand: Wxdh; Voltage: 600V; Current: 60A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-252b; Application: Power Switching Circuit; Model: DHD7n65; Batch Number: 2022; Brand: Wxdh; Voltage: 650V; Current: 7A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: P-type Semiconductor; Package: Dfn5X6; Application: Power Switching Applications; Model: Dh009n02p; Batch Number: 2021; Brand: Wxdh; Voltage: 20V; Current: 220A;	Manufacturing Technology: Discrete Device; Type: P-type Semiconductor; Voltage: 85V; Current: 130A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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