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13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f pictures & photos

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What is 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f

Name: 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f
Uploaded: 2023-08-23T09:30:24+08:00
Description: PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 13 A (T=100&or

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 500V
Current 13A
Manufacturing Technology Discrete Device
Type N-type Semiconductor
Material Metal-Oxide Semiconductor
Package to-220f
Application Power Switching Circuit
Model F13n50
Batch Number 2021
Brand Wxdh

Product Description

PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 13 A (T=100ºC) 8 A Drain Current(Pulsed) IDM 52 A Single Pulse Avalanche Energy ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

Mosfet Comparison

	Quick View 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Contact Now	Quick View Three-Terminal Voltage Regulator IC L7805CV to-220 **%off Contact Now	Quick View 10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn Contact Now

Transaction Info
	Quick View 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Contact Now	Quick View Three-Terminal Voltage Regulator IC L7805CV to-220 **%off Contact Now	Quick View 10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn Contact Now
Price	US $ 0.01-1.50/ Piece	Negotiable	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	Negotiable
Min Order	5000 Pieces	1800 Pieces	5000 Pieces	5000 Pieces	1800 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Voltage: 500V; Current: 13A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-220f; Application: Power Switching Circuit; Model: F13n50; Batch Number: 2021; Brand: Wxdh;	Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-247; Application: Inverter Welding Machine, UPS; Model: G40n120d; Batch Number: 2021; Brand: Wxdh;	Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-220; Application: Short Current Protection; Model: L7805CV; Batch Number: 2021; Brand: Wxdh;	Voltage: 800V; Current: 10A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-220f; Application: Power Switching Circuit; Model: F10n80; Batch Number: 2021; Brand: Wxdh;	Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-3pn; Application: Aircondition, Weldin, UPS; Model: G40t60d; Batch Number: 2021; Brand: Wxdh;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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