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4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b pictures & photos

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What is 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b

Name: 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b
Uploaded: 2023-11-07T14:30:39+08:00
Description: PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain Current(Pulsed) ID

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Metal-Oxide Semiconductor
Type N-type Semiconductor
Package to-251b
Application Power Switching Applications
Model B4n80
Batch Number 2021
Brand Wxdh
Transport Package Tape & Reel
Trademark WXDH
Origin Wuxi, China
Voltage 800V
Current 4A

Product Description

PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain Current(Pulsed) IDM 16 A Single Pulse Avalanche Energy EAS 153 mJ Total Dissipation ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

Mosfet Comparison

	Quick View 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b Contact Now	-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c Contact Now	100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b Contact Now	20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L Contact Now	68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b Contact Now

Transaction Info
	Quick View 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b Contact Now	-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c Contact Now	100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b Contact Now	20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L Contact Now	68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b Contact Now
Price	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-0.20/ Piece
Min Order	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-251b; Application: Power Switching Applications; Model: B4n80; Batch Number: 2021; Brand: Wxdh; Voltage: 800V; Current: 4A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: P-type Semiconductor; Package: to-220c; Application: Power Supply; Model: DTG050p06la; Batch Number: 2021; Brand: Wxdh; Voltage: -60V; Current: -140A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: P-type Semiconductor; Package: to-252b; Application: Power Switching,Converters, Full Bridge Control; Model: Dh066n06D; Batch Number: 2024; Brand: Wxdh; Voltage: 60V; Current: 100A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-263-3L; Application: Aircondition, Weldin, UPS; Model: Dge20f65m2; Batch Number: 2022; Brand: Wxdh; Voltage: 650V; Current: 20A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-252b; Application: Power Switching, Converters, Full Bridge Control; Model: Dtd080n07n; Batch Number: 2021; Brand: Wxdh; Voltage: 68V; Current: 80A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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