Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet Video

Name: Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet
Uploaded: 2022-06-27T13:37:33+08:00
Description: PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=

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Price

Min. Order Reference FOB Price

5000 Pieces Negotiable

Sepcifications

Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Manufacturing Technology Discrete Device
Type N-type Semiconductor
Material Metal-Oxide Semiconductor
Package to-220
Application Power Switching, Converters, Full Bridge Control
Model Dh10h055r
Batch Number 2021
Brand Wxdh

Product Description

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 90 A Drain Current(Pulsed) IDM 480 A Single Pulse Avalanche ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

Mosfet Comparison

	Quick View Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet Contact Now	Quick View 63A 60V N-Channel Enhancement Mode Power Mosfet Dh132n06 to-220c Contact Now	Quick View 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 Contact Now	Quick View 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247 Contact Now	Quick View 60A 1200V Fast Recovery Diode Mur60120 to-247-2L Contact Now

Transaction Info
	Quick View Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet Contact Now	Quick View 63A 60V N-Channel Enhancement Mode Power Mosfet Dh132n06 to-220c Contact Now	Quick View 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 Contact Now	Quick View 120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247 Contact Now	Quick View 60A 1200V Fast Recovery Diode Mur60120 to-247-2L Contact Now
Price	Negotiable	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-0.20/ Piece	US $ 0.01-1.50/ Piece
Min Order	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-220; Application: Power Switching, Converters, Full Bridge Control; Model: Dh10h055r; Batch Number: 2021; Brand: Wxdh;	Voltage: 60V; Current: 63A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Metal-Oxide Semiconductor; Package: to-220c; Application: Power Switching Applications; Model: Dh132n06; Batch Number: 2023; Brand: Wxdh;	Voltage: 1200V; Current: 40A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-247; Application: Welding, UPS; Model: Dgc40f120m2; Batch Number: 2023; Brand: Wxdh;	Voltage: 1200; Current: 120A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Sic; Package: to-247-3L; Signal Processing: Other; Application: Power Supplies; Model: Dcc016m120g2; Batch Number: 2023; Brand: Wxdh;	Voltage: 1200V; Current: 60A; Manufacturing Technology: Discrete Device; Type: N-type Semiconductor; Material: Silicon; Package: to-247-2L; Application: Switching Power Supply; Model: Mur60120; Batch Number: 2023; Brand: Wxdh;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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