What is 60A 200V Fast Recovery Diode Mur6020nct to-3pn

Name: 60A 200V Fast Recovery Diode Mur6020nct to-3pn
Uploaded: 2023-10-07T10:36:18+08:00
Description: Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching Cir

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Silicon
Type N-type Semiconductor
Package to-220-2L/3PF
Application Switching Power Supply
Model Mur6020nct
Batch Number 2023
Brand Wxdh
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 200V
Current 60A

Product Description

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching Circuits General Purpose PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

Diode Comparison

	Quick View 60A 200V Fast Recovery Diode Mur6020nct to-3pn Contact Now	Quick View 1200V 600A 62mm IGBT Module Dgb600h120L2t Contact Now	Quick View 650V IGBT Module Dgq450c65m2t Contact Now	Quick View 62mm IGBT Module Dgb800h120L2t Contact Now	Quick View 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn Contact Now

Transaction Info
	Quick View 60A 200V Fast Recovery Diode Mur6020nct to-3pn Contact Now	Quick View 1200V 600A 62mm IGBT Module Dgb600h120L2t Contact Now	Quick View 650V IGBT Module Dgq450c65m2t Contact Now	Quick View 62mm IGBT Module Dgb800h120L2t Contact Now	Quick View 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn Contact Now
Price	US $ 0.01-1.50/ Piece	US $ 15.00-20.00/ Piece	US $ 20.00-50.00/ Piece	US $ 20.00-50.00/ Piece	US $ 0.01-1.50/ Piece
Min Order	5000 Pieces	240 Pieces	240 Pieces	240 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-220-2L/3PF; Application: Switching Power Supply; Model: Mur6020nct; Batch Number: 2023; Brand: Wxdh; Voltage: 200V; Current: 60A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: Module; Application: Welding, UPS, Three-Leve Inverter; Model: Dgb600h120L2t; Batch Number: 2022; Brand: Wxdh;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: Module; Application: Welding, UPS, Three-Leve Inverter; Model: Dgq450c65m2t; Batch Number: 2022; Brand: Wxdh; Voltage: 650V;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: Module; Application: Welding, UPS, Three-Leve Inverter; Model: Dgb800h120L2t; Batch Number: 2022; Brand: Wxdh; Voltage: 1200V; Size: 62mm;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3pn; Application: Welding, UPS; Model: Dgn40f65m2; Batch Number: 2023; Brand: Wxdh; Voltage: 650V; Current: 40A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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