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Insulated Gate Bipolar Transistor IGBT G70n65D to-247 pictures & photos

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What is Insulated Gate Bipolar Transistor IGBT G70n65D to-247

Name: Insulated Gate Bipolar Transistor IGBT G70n65D to-247
Uploaded: 2023-08-19T16:13:38+08:00
Description: PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed Colle

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Silicon
Type N-type Semiconductor
Package to-247
Application Inverter Welding Machine, UPS
Model G70n65D
Batch Number 2021
Brand Wxdh
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 650V
Current 70A

Product Description

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed Collector Current ICM 210 A Diode Continuous Forward Current IF @TC = 100 ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

IGBT Comparison

	Quick View Insulated Gate Bipolar Transistor IGBT G70n65D to-247 Contact Now	Quick View 1200V 5A Sic Schottky Barrier Diode Dcd05D120g3 to-252 Contact Now	Quick View 650V 4A Sic Schottky Barrier Diode Dcd04D65g4 to-252 Package Contact Now	Quick View 1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2 Contact Now	Quick View 10A 1200V Sic Schottky Barrier Diode Dcgt10d120g4 to-220-2 Contact Now

Transaction Info
	Quick View Insulated Gate Bipolar Transistor IGBT G70n65D to-247 Contact Now	Quick View 1200V 5A Sic Schottky Barrier Diode Dcd05D120g3 to-252 Contact Now	Quick View 650V 4A Sic Schottky Barrier Diode Dcd04D65g4 to-252 Package Contact Now	Quick View 1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2 Contact Now	Quick View 10A 1200V Sic Schottky Barrier Diode Dcgt10d120g4 to-220-2 Contact Now
Price	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece
Min Order	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-247; Application: Inverter Welding Machine, UPS; Model: G70n65D; Batch Number: 2021; Brand: Wxdh; Voltage: 650V; Current: 70A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-252; Application: Switching Mode Power Supplies; Model: Dcd05D120g3; Batch Number: 2023; Brand: Wxdh; Voltage: 1200V; Current: 5A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-252; Application: Switching Mode Power Supplies; Model: Dcd04D65g4; Batch Number: 2023; Brand: Wxdh; Voltage: 650V; Current: 4A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-220-2; Application: Switching Mode Power Supplies; Model: Dcgt05D120g3; Batch Number: 2023; Brand: Wxdh; Voltage: 1200V; Current: 5A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-220-2; Application: Switching Mode Power Supplies; Model: Dcgt10d120g4; Batch Number: 2023; Brand: Wxdh; Voltage: 1200V; Current: 10A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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