What is 680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet

Name: 680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet
Uploaded: 2022-10-26T20:33:21+08:00
Description: ZG12N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduct

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Price

Min. Order Reference FOB Price

1000 Pieces US$0.083 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC, SGS
Shape GT
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Naturally Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure IGBT
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package by Sea, Packing
Specification T0-247, T0-3P, T0-220, T0-220F, T0-263
Trademark ZG
Origin Auhui Province, China

Product Description

ZG12N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used ...

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Jiangsu Zhongxin Semiconductor Co., Ltd.

Gold Member Since 2017

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Rectifier Diode, Diode, Bridge Rectifiers, Schottky Diodes, Schottky Barrier Rectifiers, Braking Resistor, Resistor, Mosfet, Zener Diode
Registered Capital 10000000 RMB
Plant Area >2000 square meters
Management System Certification ISO 9001, HSE, GMP, QHSE, EICC, GAP, BREEAM, QSR, ISO 50001
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: within 15 workdays

Mosfet Comparison

	Quick View 680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet Contact Now	Quick View Automotive Industry Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Nce6080 Nce N-Channel 60V 80A to-252 Enhancement Mode Power Mosfet Transistor Nce6080K Contact Now	Res Thick Film Array 220 Ohm 5% ± 200ppm/C Isol Molded 8-Pin 12 Contact Now	High Vth Series Vds 40V 800A Low RDS (on) & Fom Mosfet Contact Now

Transaction Info
	Quick View 680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet Contact Now	Quick View Automotive Industry Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Nce6080 Nce N-Channel 60V 80A to-252 Enhancement Mode Power Mosfet Transistor Nce6080K Contact Now	Res Thick Film Array 220 Ohm 5% ± 200ppm/C Isol Molded 8-Pin 12 Contact Now	High Vth Series Vds 40V 800A Low RDS (on) & Fom Mosfet Contact Now
Price	US $ 0.083/ Piece	US $ 0.10-0.60/ Piece	US $ 0.1/ Piece	US $ 0.10-0.50/ Piece	US $ 0.25-0.50/ Piece
Min Order	1000 Pieces	1000 Pieces	1 Pieces	1 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	L/C, T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T
Quality Control
Product Certification	RoHS, CE, ISO, CCC, SGS	RoHS, ISO	RoHS	-	RoHS, ISO
Management System Certification	ISO 9001, HSE, GMP, QHSE, EICC, GAP, BREEAM, QSR, ISO 50001	ISO 9001, ISO 14001	GMP	GMP	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, Eastern Europe, Africa, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM, Own Brand	Own Brand	OEM	OEM	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1-3 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	-	-	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: IGBT; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Cooling Method: Naturally Cooled Tube; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Drain Source Voltage (Vdss): 60V; Continuous Drain Current (ID): 80A; Power Dissipation (Pd): 110W; Drain Source on Resistance (RDS(on)@Vgs,: 8.5mΩ@10V,20A; Gate Threshold Voltage (Vgs(Th)@ID): 4V@250ua; Type: N Channel;	Shielding Type: Remote Cut-Off Shielding Tube; Brand: No Brand;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications1: Pd Charger; Applications2: Motor Driver; Applications3: Switching Voltage Regulator; Applications4: DC-DC Convertor; Applications5: Switching Mode Power Supply;
Supplier Name	Jiangsu Zhongxin Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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