PHOTOTRANSISTOR

US$0.048-0.05 / Piece

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DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series pictures & photos

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What is DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series

Name: DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series
Uploaded: 2023-05-14T17:11:43+08:00
Description: DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semicon

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Price

Purchase Qty. Reference FOB Price

1,000-2,999 Pieces US$0.05

3,000+ Pieces US$0.048

Sepcifications

Certification RoHS, CE, ISO, CCC
Shape GT
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Naturally Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Plastic Package
Trademark EL
Origin Guangdong, China
Features1 Halogens free (Br <900 ppm, Cl <900 ppm, Br+Cl <
Features2 Current transfer ratio
Features3 High isolation voltage between input and output (V
Features4 Compact 4 Pin SOP with a 2.0 mm profile
Features5 Compliance with EU REACH
Features6 Pb free and RoHS compliant
Features7 UL and cUL approved (No. E214129)

Product Description

DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device sales and technical services. The core management team has many years ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

PHOTOTRANSISTOR Comparison

	Quick View DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series Contact Now	Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series Contact Now	Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123 Contact Now	Irlml2060trpbf N-Channel 60 V 1.2A (Ta) 1.25W (Ta) SMD Mosfet Transistor Micro3/Sot-23 Irlml2060 Series Contact Now	Quick View Water Cooled Power Triode 3cw20000h7 for RF, Audio Amplifier (3CW20000A7, 3CW20000H3) Contact Now

Transaction Info
	Quick View DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series Contact Now	Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series Contact Now	Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123 Contact Now	Irlml2060trpbf N-Channel 60 V 1.2A (Ta) 1.25W (Ta) SMD Mosfet Transistor Micro3/Sot-23 Irlml2060 Series Contact Now	Quick View Water Cooled Power Triode 3cw20000h7 for RF, Audio Amplifier (3CW20000A7, 3CW20000H3) Contact Now
Price	US $ 0.048-0.05/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 2,000.00-4,000.00/ Piece
Min Order	1000 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, Western Union, Paypal, Money Gram, Negotiable
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS, CE	-	-	-
Management System Certification	-	GMP	GMP	GMP	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	OEM	OEM	OEM	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Halogens free (Br <900 ppm, Cl <900 ppm, Br+Cl <; Features2: Current transfer ratio; Features3: High isolation voltage between input and output (V; Features4: Compact 4 Pin SOP with a 2.0 mm profile; Features5: Compliance with EU REACH; Features6: Pb free and RoHS compliant; Features7: UL and cUL approved (No. E214129);	Function: NPN; Fet Typecurrent - Collector (IC) (Max): 800 Ma; Voltage - Collector Emitter Breakdown (M: 45 V; Vce Saturation (Max) @ Ib, IC: 700mv @ 50mA, 500mA; Current - Collector Cutoff (Max): 100na (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 250 @ 100mA, 1V; Power - Max: 310 MW; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Package / Case: to-236-3, Sc-59, Sot-23-3; Supplier Device Package: Sot-23-3 (to-236); Frequency - Transition: 100MHz;	Shape: SMD; Shielding Type: Sharp Cutoff Shielding Tube; Function: Bipolar Transistor; Encapsulation Structure: SMD; Material: Germanium; Transistor Type: NPN - Pre-Biased; Current - Collector (IC) (Max): 100 Ma; Voltage - Collector Emitter Breakdown (M: 50 V; Resistor - Base (R1): 2.2 Kohms; Resistor - Emitter Base (R2): 10 Kohms; DC Current Gain (Hfe) (Min) @ IC, Vce: 35 @ 5mA, 5V; Vce Saturation (Max) @ Ib, IC: 150mv @ 500µa, 10mA; Current - Collector Cutoff (Max): 1µa; Power - Max: 200 MW; Mounting Type: Surface Mount; Package / Case: Sc-70, Sot-323; Base Product Number: Pdtc123;	Shape: SMD; Function: Mosfet; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Continuous Drain (ID) @ 25°c: 1.2A (Ta); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 480mohm @ 1.2A, 10V; Vgs(Th) (Max) @ ID: 2.5V @ 25µa; Gate Charge (Qg) (Max) @ Vgs: 0.67 Nc @ 4.5 V; Vgs (Max): ±16V; Input Capacitance (CISS) (Max) @ Vds: 64 PF @ 25 V; Power Dissipation (Max): 1.25W (Ta); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: to-236-3, Sc-59, Sot-23-3; Base Product Number: Irlml2060;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Water Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;
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