123 Dip Diode 600v
results from3 suppliers
Sf51-Sf58 50-600V DIP Super Fast Rectifiers Diode
- Encapsulation Structure: Plastic Sealed Transistor
- Application: Electronic Products
- Certification: RoHS, CE, ISO, CCC, SGS
- Luminous Intensity: Standard
- Color: Black
- Material: Silicon
Er3j, 3A, 600V, Super Fast Rectifier Diode SMC Case
- Encapsulation Structure: SMA
- Application: Temperature Measurement
- Certification: RoHS, CCC
- Luminous Intensity: No
- Color: No
- Structure: Er3j
600V 60A Ultra-Fast Recovery Rectifier Diodes TO-247AD-2L MUR6060P
- Encapsulation Structure: TO-247AD-2L
- Application: switching power supplies,converters
- Certification: RoHS, CE, ISO
- Luminous Intensity: Standard
- Color: Black
- Structure: Planar
5A, 600V-High Efficiency Rectifier Diode-Her506
- Application: Diode, Refrigerator
- Batch Number: 2016
- Certification: CCC, RoHS
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Model: Her506
3A, 600V-High Efficiency Rectifier Diode-Her306
- Application: Diode, Refrigerator
- Batch Number: 2016
- Certification: RoHS
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Model: Her306
Mur1660CT Array Diode 600V 16A to-220-3 Mur1660 Mur1620
- Shape: DIP
- Port: Shenzhen
- Production Capacity: 10000PCS/Day
- Origin: Original
8u60 Fred to-220 8A 600V Fast Recovery Diode
- Application: Diode, Rectifier
- Batch Number: New
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Model: Kbu800
- Package: DIP(Dual In-line Package)
Kbu800 Diode Switching 600V 8A Tube Mur860g
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
Kbp6005 3A 600V Bridge Rectifier Diode Original New
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
Diode Rectifiers Hyperfast 600V 3.4V 8A 12ns Kbu406
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
Kbu800 10A 600V Bridge Rectifier Diode Kbu Package
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
Diode Rectifiers Hyperfast 600V 3.4V 8A 12ns Kbu4005
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
Jyd Rb162m Diode Array Gp 600V 8A
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
Gbpc 3506 35A 600V Customized Single Phase Diode Bridge Rectifier
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Rectifier
MB6M/MB8M/MB10M JF Brand DIP Bridge Rectifier Diode with MBM Package
- Encapsulation Structure: Plastic Sealed
- Application: Electronic Products
- Certification: RoHS, ISO
- Luminous Intensity: None Luminance
- Color: None Luminance
- Structure: GPP Chip
3RM090L-8 Ceramic Gas Discharge Tube (GDT) Lightning Protection Tube 8*10 Diode, Machine
- Operating Temperature: -40~90(Celsius)
- Peak Pulse Current: 10ka
- Power Supply Voltage (DC): 600V
- Insulation Resistance: 10 Gohms
- Voltage Characteristics: Low Pressure
- Output Voltage: 700 V
Rectifier Mur460 Mosfet 4A/600V Package Do-27 Zener Diode
- Manufacturing Technology: Integrated Circuits Device
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Digital
- Application: Radio
600V/300A Ultra-Fast Recovery Rectifier Diodes MUR6060P
- Encapsulation Structure: TO-247
- Application: switching power supplies, converters, freewheeling
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
Welding Diode High Density Rectifier 5sdd 71X0200
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual in-Line Package)
- Signal Processing: Analog Digital Composite and Function
- Model: 5sdd 71X0200
Welding Diode High Density Rectifier 5sdd 0135z0401 Zp13500A 400V
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual in-Line Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Welding Equipment
Welding Diode High Density Rectifier 5sdd 92z0401
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual in-Line Package)
- Signal Processing: Analog Digital Composite and Function
- Model: 5sdd 71X0200
High Efficiency Fast Recovery Rectifier Diode 1n4933G Thru 1n4937g
- Certification: RoHS, CE, ISO
- Shape: Do-204al(Do-41)
- Cooling Method: Naturally Cooled Tube
- Function: Recovery Diode
- Working Frequency: High Frequency
- Structure: Planar
Welding Diode High Density Rectifier 5sdd 71X0400
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual in-Line Package)
- Signal Processing: Analog Digital Composite and Function
- Model: 5sdd 71X0200
Welding Diode High Density Rectifier 5sdd 0135z0401
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual in-Line Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Welding Equipment
Welding Diode High Density Rectifier 5sdd 0120c0200
- Certificate: SGS
- Payment: Tt
- Shipping Port: Tianjin
- Tianjin: Express
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
Welding Diode High Density Rectifier 5sdd 0120c0400
- Shipping: Express
- Shipping Port: Tianjin
- Tianjin: Tt
- Certificate: SGS
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
Manufacture a Glass Passivated New Series Bridge Rectifier Fetures Applications Diode GBL408
- Encapsulation Structure: 2KBJ
- Application: AC/DC bridge
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
Welding Diode High Density Rectifier 5sdd 0105z0401
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: Intrinsic Semiconductor
- Package: DIP(Dual in-Line Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Welding Equipment
Low VF Bridge Rectifiers, VRM: 600V, Io: 25A, IFSM: 360A, JA, D25JAU60
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: JA
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 20A, IFSM: 180A, fetures, applications, 6KBJ, EGBJ2006
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: 6KBJ
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
600V 3A General Purpose Rectifier, DO-201AD, BY253G
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: DO-201AD
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Bridge Rectifiers, VRM: 600V, Io: 8A, IFSM: 170A, fetures, applications, D3K, D8UB05 THRU D8UB100
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: D3K
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Bridge Rectifiers, VRM: 600V, Io: 10A, IFSM: 175A, JB, D10JB60
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: JB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Bridge Rectifiers, VRM: 600V, Io: 15A, IFSM: 200A, fetures, applications, GBU, GBU15A THRU GBU15M
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: GBU
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 6A, IFSM: 135A, fetures, applications, GBU, EGBU606
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: GBU
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Bridge Rectifiers, VRM: 600V, Io: 6A, IFSM: 170A, fetures, applications, D3K, D6UB05A THRU D6UB100A
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: D3K
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
High Efficient Bridge Rectifiers, VRM: 600V, Io: 50A, IFSM: 450A, fetures, applications, 6KBJ, HGBJ5006
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: 6KBJ
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 10A, IFSM: 175A, fetures, applications, GBU, EGBU1006
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: GBU
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Low VF Bridge Rectifiers, VRM: 600V, Io: 15A, IFSM: 220A, fetures, applications, GBU, GBUL1506 THRU GBUL1508
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: GBU
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Three Phase Bridge Rectifiers , VRM: 600V, Io: 75A, IFSM: 800A, fetures, applications, SKBPC75, SKBPC7506 THRU SKBPC7516
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SKBPC75
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity