5,925 Field Effect Transistor
results from137 suppliers
Original Component Ipaw60r600CE Field Effect Transistor 600V Power Transistors
- shape: Other
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Semiconductor IC
- Packing: N/a
- Standard: N/A
Original New 23n50e 23n50 Mosfet 500V 23A to-247 Inverter Field Effect Mosfet Transistor
- Certification: RoHS, CE, ISO
- Shape: ST
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: -
- Function: -
- Working Frequency: -
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG310G04HJRQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Pin Field-Effect Transistor (PIN-FET) /Optical Receiving Assembly/Optical Receiver Module/Pin-Fet
- Type: Pin Field-Effect Transistor
- Package: Customize as Per Demand
- Application: Fiber Optic
- Model: as Per Demand
- Batch Number: as Per Demand
- Brand: Raytek
N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB200G06CQ
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
- Features4: Built-in ESD Diode
New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
- Certification: RoHS
- Shape: ST
- Shielding Type: /
- Cooling Method: /
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
Original Mosfet Fqpf4n60c Field Effect Transistor Fqpf4n60 4n60 Electronic Components Bom PCB Service
- Certification: RoHS, CE, ISO
- Shape: ST
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: -
- Function: -
- Working Frequency: -
Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor
- Certification: RoHS
- Shape: GT
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor, Transistor
- Working Frequency: Low Frequency
P-Channel Logic Level Enhancement Mode Field Effect Transistor Ndp6020p
- shape: DIP
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Thick Film IC
- Quality: Good
- Transistor Type: 1 P-Channel
P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL2301HQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor High Power and current handing capability SOT-23 Fetures Applications YJL05N04AQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD60G04HJQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Original Supply Transistor Irfs4010-7ppbf Package to-263 MOS Tube Field Effect Transistor
- shape: Flat
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Thick Film IC
- Quality: Good
- Condition: Brand Newand Original
P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ2305CHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23-6L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG130G04CQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-252
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-252
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
High Current High Power Bsc093n04lsg Field Effect Transistor
- shape: Flat
- Conductive Type: Unipolar Integrated Circuit
- Integration: SSI
- Technics: Thick Film IC
- Packing: Roll
- Standard: Plastic and copper
Original Integrated Circuits Irfz34npbf Power Field-Effect to-220 Transistor
- shape: Flat
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Semiconductor IC
- Standard Package: to-220
- Lead Shape: Through Hole
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23-6L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
High Power Field Effect Transistor Ikw50n65f5
- Certification: RoHS
- Encapsulation Structure: Chip Transistor
- Installation: Plug-in Triode
- Function: Power Triode
- Material: Plastic and Copper
- Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
N-Channel Enhancement Mode Field Effect Transistor Power MOSFET Fetures Applications Diode 20V, 5A CET-CES2312A
- Certification: RoHS, CE, ISO, CCC
- Function: High Back Pressure Transistor
- Structure: Planar
- Encapsulation Structure: SOT-23
- Material: Silicon
- Features1: Extremely Low Switching Loss
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD60G06AQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Halogen Free Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG85G06HQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD50G06AQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Original Mosfet Smk0760f Smk0760 Field Effect Transistor
- Certification: RoHS, CE, ISO
- Encapsulation Structure: Chip Transistor
- Power Level: Medium Power
- Material: Iron and Plastic
- Product: Smk0760f
- Packing: Tube
N-Channel Mosfet Irf644n Irf644 14A/250V Field-Effect Transistor
- Certification: RoHS
- Shape: DIP
- Shielding Type: /
- Cooling Method: /
- Working Frequency: High Frequency
- Structure: /
Original NPN Silicon Power Transistors Bd243c to-220 Field Effect Transistor
- Function: Switch Transistor
- RoHS: /
- Price: Please Contact Us
- Brand Name: China
- Series: /
- Product Type: Transistor
Field Effect Mosfet G16p03D3 Dfn3X3-8L -30V -16A P Channel SMD Power Transistor
- Certification: RoHS, ISO
- Shape: SMD
- Function: Switch Transistor
- Encapsulation Structure: Plastic Sealed Transistor
- Power Level: Medium Power
- Material: Silicon
N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-252
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Original to-220 Fqp10n60 10n60 Mosfet Field Effect Transistor
- shape: Other
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Semiconductor IC
- Packing: N/a
- Standard: N/A
600V N-Channel Super Junction MOSFET Fetures Applications N-Ch SJ MOS (S3) ESD Zener Application SMPS, UPS, PFC, TELECOM, SemiHow-HCS60R290S
- Encapsulation Structure: TO-220FS
- Application: SMPS, UPS, PFC, etc..
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
Original New 23n50e 23n50 Mosfet 500V 23A to-247 Inverter Field Effect Mosfet Transistor
- Shape: DIP/SMD
- Shielding Type: N/a
- Cooling Method: N/a
- Function: N/a
- Working Frequency: N/a
- Structure: N/a
Original Transistors Irfz44npbf Mosfet N-CH 55V 49A To220ab Bom PCBA PCB SMT Service
- Encapsulation Structure: Chip Transistor
- Certification: RoHS, CE, ISO
- Luminous Intensity: -
- Structure: -
- Material: Germanium
- Packing: Package
Field-Effect Transistor Irf450 Irf450 500V12A New and Original
- Certification: RoHS
- Encapsulation Structure: Ceramic Packaged Transistor
- Installation: SMD Triode
- Working Frequency: Overclocking
- Power Level: High Power
- Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode
New and Original P-Channel MOS Field-Effect Transistor (IPB90P04P4L)
- shape: Flat
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Thick Film IC
- Supply Ability: 1000000 Piece/Pieces Per Month
- Minimum Packing Quantity: 2500 PCS
20V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Power Management Switches WAYON-WM02P160R
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
MOS Field Effect Transistor Irfp150n 42A / 100V in-Line Transistor to-247 / To3p
- shape: DIP
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Thick Film IC
- Brand Name: Original
- Lead Free Status: RoHS Compliant
Enhancement Mode N-Channel Power MOSFET Fetures Applications The GreenMOS® high voltage MOSFET Oriental-OSG60R150PF
- Encapsulation Structure: TO-220
- Application: PC power,LED lighting
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon