4,155 Field Effect Transistor
results from96 suppliers
N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ
US$ 0.84 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: DFN3333-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Original Integrated Circuits Irfz34npbf Power Field-Effect to-220 Transistor
US$ 0.2-0.3 / Piece
Min. Order:1 Piece
- Shape: Flat
- Standard Package: to-220
- Lead Shape: Through Hole
- Packaging: Tube
- Channel Type: N
- Conductive Type: Unipolar Integrated Circuit
Pin Field-Effect Transistor (PIN-FET) /Optical Receiving Assembly/Optical Receiver Module/Pin-Fet
US$ 450 / Piece
Min. Order:10 Pieces
- Type: All
- Regulation Mode: Thermostat
- Automatic Grade: Automatic
- Paper Size: A4
- Application: Fiber Optic
- Batch Number: as Per Demand
P-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD15GP10HQ
US$ 0.18-1.19 / Piece
Min. Order:1 Piece
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
- Features4: Built-in ESD Diode
N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ
US$ 0.18-1.16 / Piece
Min. Order:1 Piece
- Certification: RoHS
- Function: Switch Transistor
- Structure: Planar
- Encapsulation Structure: SOT-323
- Power Level: High Power
- Material: Silicon
Power MOS Field Effect Transistor Ika15n60t
US$ 0.8-2 / Piece
Min. Order:10 Pieces
- Encapsulation Structure: Chip Transistor
- Installation: Plug-in Triode
- Material: Plastic and Copper
- Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
- Port: Shenzhen
- Trademark: CHN
New tech N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ
US$ 0.86 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD60G06AQ
US$ 0.93 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
P-Channel Enhancement Mode Field Effect Transistor, VDSS: -60V, ID: -100A, PD: 178W, fetures, applications, TO-263, YJB100GP06H
US$ 0.785 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-263
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Irfz48n Irfz48npbf Irfz48 To220 Mosfet N-Channel 55V 64A Field Effect Transistor
US$ 0.01-0.25 / Piece
Min. Order:1 Piece
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Memory Type: Logic Ics
- Shape: Flat
- Technics: Semiconductor IC
- D/C: New
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD60G04HHQ
US$ 0.91 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 60V, ID: 56A, PD: 50W, fetures, applications, TO-252, YJD56G06A
US$ 0.722 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-252
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 50V, ID: 0.25A, PD: 0.8W, fetures, applications, SOT-323, BSS138BW
US$ 0.618 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-323
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 30V, ID: 150A, PD: 69W, fetures, applications, PDFN5060-8L, YJG150N03A
US$ 0.778 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ
US$ 0.91 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23-6L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD55G10AQ
US$ 0.18-1.19 / Piece
Min. Order:1 Piece
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-252
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 80V, ID: 100A, PD: 152W, fetures, applications, PDFN5060-8L, YJG100G08E
US$ 0.735 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
US$ 0.31-0.35 / Piece
Min. Order:50 Pieces
- Certification: RoHS
- Shape: ST
- Shielding Type: /
- Cooling Method: /
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 60V, ID: 200A, PD: 260W, fetures, applications, TO-263, YJB200G06C
US$ 0.735 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-263
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ
US$ 0.93 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 50V, ID: 0.34A, PD: 0.35W, fetures, applications, SOT-23, BSS138
US$ 0.63 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
600V N-Channel Super Junction MOSFET Fetures Applications N-Ch SJ MOS (S3) ESD Zener Application SMPS, UPS, PFC, TELECOM, SemiHow-HCS60R290S
US$ 0.13-1 / Piece
Min. Order:1 Piece
- Encapsulation Structure: TO-220FS
- Application: SMPS, UPS, PFC, etc..
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
Enhancement Mode N-Channel Power MOSFET Fetures Applications The GreenMOS® high voltage MOSFET Oriental-OSG60R150PF
US$ 0.24-1 / Piece
Min. Order:1 Piece
- Encapsulation Structure: TO-220
- Application: PC power,LED lighting
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
Fdn338p P-Channel Logic Level Enhancement Mode Field Effect Transistor
US$ 1.69-2 / Piece
Min. Order:1000 Pieces
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: Chip Transistor
- Installation: Patch
- Function: Photosensitive, Darlington Tube, Power Triode
- Material: Silicon
- Subcategory: Mosfets
Original Ipp60r190c6 600V20A Power Field-Effect Transistor Ipp60r190c6
US$ 0.01-0.1 / Piece
Min. Order:1 Piece
- Shape: Other
- Conductive Type: Unipolar Integrated Circuit
- Integration: GSI
- Technics: Semiconductor IC
- Packing: N/a
- Standard: N/A
N-Channel Amplifier Field-Effect Transistor Bf245c F245c
US$ 0.14 / Piece
Min. Order:10 Pieces
- Certification: RoHS
- Encapsulation Structure: DIP
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Function: Power Triode, Amplifier Transistor
20V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Power Management Switches WAYON-WM02P160R
US$ 0.12-1 / Piece
Min. Order:1 Piece
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Irfz24n N-Channel Mosfet - 55V, 17A, Low RDS (on) for High-Efficiency Power Applications
Min. Order:10 Pieces
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: To220
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Material: Element Semiconductor
Ao4435 Mode Mosfet Sop8
US$ 0.03 / Piece
Min. Order:1000 Pieces
- Certification: RoHS, CE, ISO
- Encapsulation Structure: Plastic Sealed Transistor
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Function: Switching Triode
Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor
US$ 2.362-4.129 / Piece
Min. Order:100 Pieces
- Certification: RoHS
- Shape: GT
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor, Transistor
- Working Frequency: Low Frequency
N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ
US$ 0.97 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
DC-DC Converter Mosfet Irf840 N-Channel Power Mosfet
Min. Order:10 Pieces
- Certification: RoHS, CE, ISO, CCC
- Installation: Plug-in Triode
- Working Frequency: Low Frequency
- Power Level: Small Power
- Function: Photosensitive, Darlington Tube, Power Triode
- Structure: Diffusion
Ao4435 -30V P-Channel Mode Mosfet
US$ 0.05 / Piece
Min. Order:20000 Pieces
- Certification: RoHS
- Encapsulation Structure: Plastic Sealed Transistor
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Function: Switching Triode
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 40V, ID: 80A, PD: 100W, fetures, applications, PDFN5060-8L, YJG80G04B
US$ 0.713 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN5060-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
High-Performance Fqp30n06 N-Channel Mosfet 60V 30A to-220 Package
Min. Order:10 Pieces
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: To220
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Material: Element Semiconductor
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 150V, ID: 115A, PD: 227W, fetures, applications, TO-263, YJB115G15H
US$ 0.73 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-263
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
High-Performance Irf3710pbf N-Channel Mosfet 100V 57A for Power Electronics
Min. Order:10 Pieces
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: To220
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Material: Element Semiconductor
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 50A, PD: 41W, fetures, applications, ITO-220AB, YJF50G10H
US$ 0.715 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: ITO-220AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Irfz48n N-Channel Mosfet - 55V, 60A, Suitable for Switching Regulators and Inverters
Min. Order:10 Pieces
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: To220
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: High Power
- Material: Element Semiconductor
P-Channel Enhancement Mode Field Effect Transistor , VDSS: -19V, ID: -1.5A, PD: 0.25W, fetures, applications, SOT-323, YJL2301GW
US$ 0.715 / Piece
Min. Order:1000 Pieces
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-323
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
