4,378 Thyristor For Ac Switch
results from91 suppliers
Capsule Type High Voltage Phase Control Thyristor Kp1300A6500V
- Outlie Type: Capsule
- Voltage Range: 600V-6500V
- Feature: High Current Density
- Chip Type: Silicon Controlled Chip
- Cooling: Double-Side Cooling
- Install: Parallel, Series
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=90A fetures applications MT90C16T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=2200V VRSM=2300V ITAV=90A fetures applications MT90C22T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200U08T2
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Three Phase Bridge + Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=75A fetures applications MT75DT16L1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: L1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Module VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=25A fetures applications MT25C08T1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=90A fetures applications MT90C18T1D
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1D
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=90A fetures applications MT90C16T1D
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1D
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Three Phase Bridge+ Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV / ITAV=150A fetures applications MT150DT-L2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: L2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=130A fetures applications MT130C16T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200U16T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200C08T2
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=40A fetures applications MT40C16T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Module VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=25A fetures applications MT25C18T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Module VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=25A fetures applications MT25C16T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Three Phase Bridge + Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=75A fetures applications MT75DT12L1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=60A fetures applications MT60C12T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Three Phase Bridge + Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=100A fetures applications MT100DT18L1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: L1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200U18T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=90A fetures applications MT90C08T1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=160A fetures applications MT160C16T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=130A fetures applications MT130C18T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800V to 1800V VRSM=900V to 1900V ITAV=110A fetures applications MT110C18T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=60A fetures applications MT60C18T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=160A fetures applications MT160C18T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=40A fetures applications MT40C08T1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Three Phase Bridge+ Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV / ITAV=200A fetures applications MT200DT-L2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: L2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Three Phase Bridge + Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=75A fetures applications MT75DT08L1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=90A fetures applications MT90C18T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200C16T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor/Diode Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV / ITAV=130A fetures applications MT130CB-T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=130A fetures applications MT130C12T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200U12T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Three Phase Bridge + Thyristor VRRM/VDRM=800 to1800V VRSM=900V to 1900V IFAV/ITAV=100A fetures applications MT100DT08L1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800V to 1800V VRSM=900V to 1900V ITAV=110A fetures applications MT110C12T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=90A fetures applications MT90C12T1D
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1D
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=40A fetures applications MT40C18T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Module VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=25A fetures applications MT25C12T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T1
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ID=60A fetures applications MT60C08T1
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
Thyristor Modules VRRM/VDRM=800 to1800V VRSM=900V to 1900V ITAV=200A fetures applications MT200C18T2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity